Product Information

STP110N8F7

STP110N8F7 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 80 V, 6.4 mOhm typ., 80 A STripFET F7 Power MOSFET in a TO-220 package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 0.8505 ea
Line Total: USD 42.52

0 - Global Stock
MOQ: 50  Multiples: 50
Pack Size: 50

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0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 50
Multiples : 50

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STP110N8F7
STMicroelectronics

50 : USD 0.8505
200 : USD 0.7875
750 : USD 0.756
2000 : USD 0.756
5000 : USD 0.756

0 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1000
Multiples : 1000

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STP110N8F7
STMicroelectronics

1000 : USD 1.1765

0 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1000
Multiples : 1000

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STP110N8F7
STMicroelectronics

1000 : USD 1.218

0 - WHS 4


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

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STP110N8F7
STMicroelectronics

1 : USD 1.8332
10 : USD 1.5216
30 : USD 1.2952
100 : USD 1.1077
500 : USD 1.0761
1000 : USD 1.0615

0 - WHS 5


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

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STP110N8F7
STMicroelectronics

1 : USD 4.698
10 : USD 1.6956
25 : USD 1.6092
100 : USD 1.3716
500 : USD 1.1232
1000 : USD 0.931

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
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Additional Infomation About Product

STP110N8F7 N-channel 80 V, 6.4 m typ., 80 A, STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R I P DS DS(on)max D TOT STP110N8F7 80 V 7.5 m 80 A 170 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applications Switching applications Figure 1: Internal schematic diagram Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packaging STP110N8F7 110N8F7 TO-220 Tube November 2015 DocID027154 Rev 2 1/13 www.st.com This is information on a product in full production. Contents STP110N8F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 TO-220 package mechanical data .................................................. 10 5 Revision history ............................................................................ 12 2/13 DocID027154 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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