STP11NM50N STMicroelectronics

STD11NM50N STF11NM50N, STP11NM50N N-channel 500 V, 0.4 , 8.5 A MDmesh II Power MOSFET in DPAK, TO-220FP and TO-220 Features R DS(on) Order codes V T I DSS Jmax D 3 max 1 3 STD11NM50N 2 DPAK 1 STF11NM50N 550 V < 0.47 8.5 A STP11NM50N TO-220 100% avalanche tested 3 2 Low input capacitance and gate charge 1 TO-220FP Low gate input resistance Application Switching applications Figure 1. Internal schematic diagram Description These devices are made using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 - V Table 1. Device summary Order codes Marking Package Packaging STD11NM50N 11NM50N DPAK Tape and reel STF11NM50N 11NM50N TO-220FP Tube STP11NM50N 11NM50N TO-220 Tube November 2010 Doc ID 17156 Rev 3 1/16 www.st.com 16 Contents STD11NM50N, STF11NM50N, STP11NM50N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 14 6 Revision history . 15 2/16 Doc ID 17156 Rev 3