STP20NE06L STP20NE06LFP N - CHANNEL 60V - 0.06 W - 20A TO-220/TO-220FP STripFET POWER MOSFET TYPE V R I DSS DS(on) D STP20NE06L 60 V <0.07 W 20 A STP20NE06LFP 60 V <0.07 W 13 A n TYPICAL RDS(on) = 0.06 W n EXCEPTIONAL dv/dt CAPABILITY n 100% AVALANCHE TESTED o n LOW GATE CHARGE 100 C n APPLICATION ORIENTED 3 3 CHARACTERIZATION 2 2 1 1 DESCRIPTION This Power Mosfet is the latest development of TO-220 TO-220FP STMicroelectronics unique Single Feature Size strip-based process. The resulting transi- stor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a re- INTERNAL SCHEMATIC DIAGRAM markable manufacturingreproducibility. APPLICATIONS n DC MOTOR CONTROL n DC-DC & DC-AC CONVERTERS n SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP20NE06 STP20NE06FP V Drain-source Voltage (V =0) 60 V DS GS V Drain- gate Voltage (R =20 kW)60 V DGR GS V Gate-source Voltage 20 V GS o I Drain Current (continuous) at T =25C20 13A D c o I Drain Current (continuous) at T = 100C14 9 A D c I () Drain Current (pulsed) 80 80 A DM o P Total Dissipation at T =25C7030W tot c o Derating Factor 0.47 0.2 W/ C V Insulation Withstand Voltage (DC) 2000 V ISO dv/dt Peak Diode Recovery voltage slope 7 V/ns o T Storage Temperature -65 to 175 C stg o T Max. Operating Junction Temperature 175 C j () Pulse width limited by safe operating area ( 1)I 20 A, di/dt 300 A/m s, V V ,T T SD DD (BR)DSS j JMAX 1/9 April 1999 Obsolete Product(s) - Obsolete Product(s) STP20NE06L/FP THERMAL DATA TO-220 TO-220FP o R ThermalResistanceJunction-case Max 2.14 5 C/W thj-case o R ThermalResistanceJunction-ambient Max 62.5 C/W thj-amb o RThermalResistanceCase-sink Typ 0.5 C/W thc-sink o TMaximumLeadTemperatureForSolderingPurpose 300 C l AVALANCHECHARACTERISTICS Symbol Parameter MaxValue Unit IAvalancheCurrent,RepetitiveorNot-Repetitive 20 A AR (pulsewidthlimitedbyTmax) j ESinglePulseAvalancheEnergy 100 mJ AS o (startingT=25C,I=I,V=35V) j DARDD o ELECTRICALCHARACTERISTICS(T=25Cunlessotherwisespecified) case OFF Symbol Parameter TestConditions Min. Typ. Max. Unit V Drain-source I=250mAV=0 60 V (BR)DSS D GS BreakdownVoltage IZeroGateVoltageV=MaxRating 1 mA DSS DS o DrainCurrent(V=0)V=MaxRating T=125C 10 mA GS DS c I Gate-bodyLeakage V=20V 100 nA GSS GS Current(V=0) DS ON(*) Symbol Parameter TestConditions Min. Typ. Max. Unit V GateThresholdVoltageV =V I =250 A 1 V m GS(th) DS GS D R Static Drain-source On V =5V I =10A 0.07 0.085 W DS(on) GS D Resistance V =10V I =10A 0.06 0.07 W GS D I OnStateDrainCurrent V >I xR 20 A D(on) DS D(on) DS(on)max V =10V GS DYNAMIC Symbol Parameter TestConditions Min. Typ. Max. Unit g (*)Forward V >I xR I=10A 5 9 S fs DS D(on) DS(on)max D Transconductance C InputCapacitance V =25V f=1MHz V=0 800 pF iss DS GS C OutputCapacitance 125 pF oss C ReverseTransfer 40 pF rss Capacitance 2/9 Obsolete Product(s) - Obsolete Product(s)