STP35N60DM2 STMicroelectronics

STP35N60DM2 N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STP35N60DM2 600 V 0.110 28 A 210 W Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Figure 1: Internal schematic diagram Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge (Q ) rr and time (t ) combined with low R , rendering rr DS(on) it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STP35N60DM2 35N60DM2 TO-220 Tube September 2015 DocID028348 Rev 1 1/13 www.st.com This is information on a product in full production. Contents STP35N60DM2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220 type A package information ................................................ 10 5 Revision history ............................................................................ 12 2/13 DocID028348 Rev 1