Product Information

STPS160H100TV

STPS160H100TV electronic component of STMicroelectronics

Datasheet
Schottky Diodes & Rectifiers 2X80 Amp 100 Volt

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 19.1665 ea
Line Total: USD 1916.65

97 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
97 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 100
Multiples : 100

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STPS160H100TV
STMicroelectronics

100 : USD 19.1665

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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STPS160H100TV High voltage power Schottky rectifier Datasheet - production data Description A1 K1 High frequency dual Schottky rectifier designed A2 K2 for high frequency telecom, computer SMPS and other power converters. A2 Packaged in ISOTOP, this device is intended for use in medium voltage operation and in high K2 frequency circuitries where low switching losses and low noise are required. A1 Table 1: Device summary K1 Symbol Value ISOTOP I 2 x 80 A F(AV) VRRM 100 V T (max.) 150 C j Features VF (max.) 0.68 V Negligible switching losses High junction temperature capability Low leakage current Good trade-off between leakage current and TM: ISOTOP is a trademark of forward voltage drop STMicroelectronics Avalanche rated Low induction package Insulated package ISOTOP: Insulated voltage: 2500 VRMS Capacitance: 45 pF November 2017 DocID5384 Rev 5 1/10 www.st.com This is information on a product in full production. Characteristics STPS160H100TV 1 Characteristics Table 2: Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V I Forward rms current 180 A F(RMS) Per diode 80 IF(AV) Average forward current, = 0.5 TC = 110 C A Per device 160 I Surge non repetitive forward current t = 10 ms sinusoidal 1000 A FSM p I Repetitive peak reverse current t = 2 s square f = 1 kHz 2 A RRM p I Non repetitive peak reverse current tp = 100 s square 10 A RSM PARM Repetitive peak avalanche power tp = 10 s Tj = 125 C 5400 W T Storage temperature range -55 to +150 C stg (1) Tj Maximum operating junction temperature 150 C Notes: (1) (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 3: Thermal parameters Maximum Symbol Parameter Unit values Per diode 0.9 R Junction to case th(j-c) Total 0.5 C/W R Coupling 0.14 th(c) When the diodes 1 and 2 are used simultaneously: Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) 2/10 DocID5384 Rev 5

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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