STPS16045TV STMicroelectronics

STPS16045TV POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I 2 x 80 A F(AV) K2 A2 VRRM 45 V Tj (max) 150 C V (max) 0.69 V F K1 A1 FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW THERMAL RESISTANCE INSULATED PACKAGE: Insulating voltage = 2500 V (RMS) Capacitance = 45 pF TM DESCRIPTION ISOTOP Dual power Schottky rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in ISOTOP, this device is especially in- tended for use in low voltage, high frequency in- verters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 45 V RRM IF(RMS) RMS forward current 125 A I Average forward current Tc = 75C Per diode 80 A F(AV) = 0.5 Per device 160 I Surge non repetitive forward current tp = 10 ms sinusoidal 900 A FSM I Repetitive peak reverse current tp = 2 s square 2A RRM F = 1kHz I Non repetitive peak reverse current tp = 100 s square 5 A RSM T Storage temperature range - 55 to + 150 C stg Tj Maximum operating junction temperature * 150 C dV/dt Critical rate of rise of reverse voltage 10000 V/ s dPtot 1 * : < thermal runaway condition for a diode on its own heatsink dTj Rth(j- a) ISOTOP is a trademark of STMicroelectronics June 1999 - Ed: 3A 1/4STPS16045TV THERMAL RESISTANCES Symbol Parameter Value Unit R Junction to case Per diode 1 C/W th (j-c) Total 0.55 R Coupling 0.1 th (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode) x R (Per diode) + P(diode 2) x R th(j-c) th(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests Conditions Min. Typ. Max. Unit I * Reverse leakage current Tj = 25CV = V 1mA R R RRM Tj = 125C 43 150 VF * Forward voltage drop Tj = 125CIF = 80 A 0.62 0.69 V Tj = 25CI = 160 A 0.95 F Tj = 125CI = 160 A 0.8 0.90 F Pulse test : * tp = 380 s, < 2% To evaluate the conduction losses use the following equation : 2 P = 0.48 x I + 0.00262 x I F(AV) F (RMS) Fig. 1: Average forward power dissipation versus Fig. 2: Average current versus case temperature average forward current (per diode). ( = 0.5, per diode). PF(av)(W) IF(av)(A) 80 90 Rth(j-a)=Rth(j-c) = 0.5 = 0.2 80 70 = 0.1 70 60 = 0.05 = 1 60 50 50 40 40 Rth(j-a)=5C/W 30 30 T T 20 20 10 10 =tp/T tp IF(av) (A) tp =tp/T Tamb(C) 0 0 0 102030 40506070 8090 100 0 25 50 75 100 125 150 2/4