STPS160 Datasheet 60 V, 1 A power Schottky rectifier Features Very small conduction losses Negligible switching losses Low forward voltage drop Surface mount miniature packages Avalanche capability specified ECOPACK2 compliant Applications Lighting Battery charger DC / DC converter Notebook adapter Switching diode Description Single Schottky rectifiers designed for high frequency miniature switched mode power supplies such as adaptors and on board DC/DC converters. Packaged in SMA, SMA Flat Notch or SMB, the STPS160 is ideal for use in parallel with MOSFETs in synchronous and low voltage secondary rectification. Product status STPS160 Product summary Symbol Value I F(AV) 1 A V 60 V RRM T 150 C j(max.) V 0.49 V F(typ.) DS0962 - Rev 10 - October 2019 www.st.com For further information contact your local STMicroelectronics sales office.STPS160 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM T = 130 C SMA L I Average forward current, = 0.5, square wave 1 A F(AV) T = 135 C SMA Flat Notch, SMB L SMA, SMB 75 I Surge non repetitive forward current t = 10 ms sinusoidal A FSM p SMA Flat Notch 100 P t = 10 s, T = 125 C Repetitive peak avalanche power 180 W ARM p j T Storage temperature range -65 to +150 C stg (1) T Maximum operating junction temperature +150 C j 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameter Symbol Parameter Max. value Unit SMA 30 R Junction to lead SMA Flat Notch 20 C/W th(j-l) SMB 23 For more information, please refer to the following application note : AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C j - 4 A (1) V = V I Reverse leakage current R R RRM T = 125 C - 1.1 4 mA j T = 25 C - 0.67 j I = 1 A F T = 125 C - 0.49 0.57 j (2) V Forward voltage drop V F T = 25 C - 0.8 j I = 2 A F T = 125 C - 0.58 0.65 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.49 x I + 0.08 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS0962 - Rev 10 page 2/13