Product Information

STPS2045CH

STPS2045CH electronic component of STMicroelectronics

Datasheet
Schottky Diodes & Rectifiers Power Schottky rectifier

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.589 ea
Line Total: USD 2.59

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 14 May to Thu. 16 May

MOQ : 1
Multiples : 1

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STPS2045CH
STMicroelectronics

1 : USD 2.589
10 : USD 0.9482
100 : USD 0.698
500 : USD 0.552
1000 : USD 0.4412
3000 : USD 0.4008

     
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STPS2045CH Datasheet 45 V power Schottky rectifier Features A1 K Very small conduction losses A2 Avalanche specification Low forward voltage drop High frequency operation ECOPACK 2 compliant A1 K A2 Applications DC/DC converter IPAK Battery charger SMPS Desktop power Auxiliary power Description This dual-diode common cathode Schottky rectifier is ideal for high frequency switch mode power supply. Packaged in IPAK, the STPS2045CH is optimized for notebook, game station and desktop adapters, providing in these applications a good efficiency at both low and high load. Product status link STPS2045CH Product summary I 2 x 10 A F(AV) V 45 V RRM V (typ.) 0.50 V F T (max.) 175 C j DS8991 - Rev 3 - November 2018 www.st.com For further information contact your local STMicroelectronics sales office.STPS2045CH Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values, at 25 C unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 45 V RRM I Forward rms current 20 A F(RMS) T = 155 C Per diode 10 C I Average forward current = 0.5, square wave A F(AV) T = 150 C Per device 20 C I Surge non repetitive forward current t = 10 ms sine-wave 150 A FSM p P Repetitive peak avalanche power t = 10 s, T = 125 C 280 W ARM p j T Storage temperature range -65 to +175 C stg (1) T +175 C j Maximum operating junction temperature 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameters Symbol Parameter Value Unit Per diode 2.5 R Junction to case th(j-c) Total 1.6 C/W R Coupling 0.7 th(c) For more information, please refer to the following application note : AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 100 A j (1) I Reverse leakage current V = V R RRM R T = 125 C - 7 15 mA j T = 125 C I = 10 A - 0.50 0.57 j F (2) V T = 25 C Forward voltage drop - 0.84 V F j I = 20 A F T = 125 C - 0.65 0.72 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.42 x I + 0.015 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS8991 - Rev 3 page 2/9

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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