STPS20L15D STMicroelectronics

STPS20L15 Low drop OR-ing power Schottky diode Datasheet - production data Description K A Packaged in TO-220AC or DPAK, this device is especially intended for use as an OR-ing diode in K K fault tolerant power supply equipments. K Table 1: Device summary Symbol Value A I 20 A F(AV) A K A NC VRRM 15 V NC V (typ.) 0.28 V F TO-220AC DPAK Tj (max.) 125 C Features Very low forward voltage drop for less power dissipation and reduced heatsink size Reverse voltage suited to OR-ing of 3 V, 5 V and 12 V rails Avalanche capability specified ECOPACK 2 compliant component for DPAK on demand October 2016 DocID5512 Rev 4 1/12 www.st.com This is information on a product in full production. Characteristics STPS20L15 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 15 V I Forward rms current 30 A F(RMS) IF(AV) Average forward current TC = 115 C, DC 20 A I Surge non repetitive forward current t = 10 ms sinusoidal 310 A FSM p PARM Repetitive peak avalanche power tp = 10 s, Tj = 125 C 970 W T Storage temperature range -65 to +150 stg C (1) Tj Maximum operating junction temperature 125 Notes: (1) (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameters Symbol Parameter Max. value Unit Rth(j-c) Junction to case 1.6 C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 6 (1) I Reverse leakage current V = 15 V mA R R T = 100 C - 200 500 j IF = 19 A - 0.41 T = 25 C j I = 40 A - 0.52 F (1) VF Forward voltage drop V IF = 19 A - 0.28 0.33 T = 125 C j I = 40 A 0.42 0.50 F Notes: (1) Pulse test: t = 380 s, < 2% p To evaluate the maximum conduction losses, use the following equation: -3 2 P = 0.18 x IF(AV) + 8.10 x IF (RMS) 2/12 DocID5512 Rev 4