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STPS20S100CFP STMicroelectronics
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STPS20S100C Datasheet 100 V power Schottky rectifier Features High junction temperature capability for converters located in confined A1 environment K A2 Low leakage current at high temperature Low static and dynamic losses as a result of the Schottky barrier Avalanche specification K ECOPACK 2 compliant A2 A2 K K A1 A1 Applications TO-220FPAB TO-220AB Switching diode SMPS DC/DC converter LED lighting Desktop power supply Description Schottky barrier rectifier designed for high frequency miniature switched mode power supplies such as adaptors and on board DC/DC converters. The STPS20S100C is housed in TO-220AB and TO-220FPAB packages. Product status link STPS20S100C Product summary Symbol Value I 2 x 10 A F(AV) V 100 V RRM T 175 C j V (typ.) 0.66 V F DS4269 - Rev 3 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.STPS20S100C Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 100 V RRM I Forward rms current 30 A F(RMS) T = 155 C, = 0.5 Per diode 10 c TO-220AB T = 150 C, = 0.5 Per device 20 c I Average forward current A F(AV) T = 135 C, = 0.5 Per diode 10 c TO-220FPAB T = 115 C, = 0.5 Per device 20 c I Surge non repetitive forward current t = 10 ms sinusoidal 180 A FSM p P Repetitive peak avalanche power t = 10 s, T = 125 C 518 W ARM p j T Storage temperature range -65 to +175 C stg (1) T 175 C j Maximum operating junction temperature 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameters Symbol Parameter Max. value Unit Per diode 2.2 TO-220AB Total 1.3 R Junction to case th(j-c) Per diode 4.5 TO-220FPAB C/W Total 3.5 TO-220AB 0.3 R Coupling th(c) TO-220FPAB 2.5 When the diodes 1 and 2 are used simultaneously : T (diode 1) = P(diode1) x R (per diode) + P(diode 2) x R j th(j-c) th(c) Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 3.5 A j (1) I V = V Reverse leakage current R R RRM T = 125 C - 1.3 4.5 mA j DS4269 - Rev 3 page 2/12
