STPS20SM100S Power Schottky rectifier Features A(1) K(2) High current capability A(3) Avalanche rated K Low forward voltage drop current High frequency operation A A Insulated package (TO-220FPAB): A Insulation voltage 2000 V rms K A K Package capacitance = 12 pF 2 TO-220AB I PAK STPS20SM100ST STPS20SM100SR Description K This single Schottky rectifier is suited for high frequency switch mode power supply. A A 2 Packaged in TO-220AB, TO-220FPAB, D PAK 2 and I PAK, this device is intended to be used in K A A notebook, game station and desktop adaptors, 2 TO-220FPAB D PAK providing in these applications a good efficiency STPS20SM100SFP STPS20SM100SG at both low and high load. Table 1. Device summary (a) Figure 1. Electrical characteristics I 20 A F(AV) I V V 100 V RRMForwar I T (max) 150 C j 2 x I X O V (typ) 0.480 V F I F I O X V RRM V V R AR V I R V V V V F(I ) F F(2xI ) To o oRevers I AR a. V and I must respect the reverse safe ARM ARM operating area defined in Figure 14. V and I are AR AR pulse measurements (t < 1 s). V , I , V and V , p R R RRM F are static characteristics April 2010 Doc ID 15524 Rev 2 1/11 www.st.com 11Characteristics STPS20SM100S 1 Characteristics Table 2. Absolute ratings (limiting values with terminals 1 and 3 short circuited) Symbol Parameter Value Unit V Repetitive peak reverse voltage 100 V RRM I Forward rms current 30 A F(RMS) 2 2 TO-220AB, D PAK, I PAK T = 125 C c I Average forward current = 0.5 20 A F(AV) TO-220FPAB T = 85 C c t = 10 ms sinusoidal, p I Surge non repetitive forward current 350 A FSM terminals 1 and 3 short circuited (1) P Repetitive peak avalanche power t = 1 s T = 25 C 15000 W ARM p j Maximum repetitive peak avalanche t < 1 s T < 150 C (2) p j V 120 V ARM voltage I < 37.5 A AR Maximum single pulse peak t < 1 s T < 150 C (2) p j V 120 V ASM avalanche voltage I < 37.5 A AR T Storage temperature range -65 to + 150 C stg (3) T Maximum operating junction temperature 150 C j 1. For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. Refer to Figure 14. dPtot 1 --------------- -------------------------- 3. < condition to avoid thermal runaway for a diode on its own heatsink dTj Rth()j a Table 3. Thermal resistance Symbol Parameter Value Unit 2 2 TO-220AB, D PAK, I PAK 1.3 R Junction to case C/W th(j-c) TO-220FPAB 4 Table 4. Static electrical characteristics (terminals 1 and 3 short circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 10 30 A j V = V R RRM T = 125 C 10 30 mA j (1) I Reverse leakage current R T = 25 C 5A j V = 70 V R T = 125 C 5 mA j T = 25 C 565 j I = 5 A F T = 125 C 480 j T = 25 C 685 j (2) V Forward voltage drop I = 10 A mV F F T = 125 C 560 620 j T = 25 C 800 900 j I = 20 A F T = 125 C 630 700 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.6 x I + 0.005 x I F(AV) F (RMS) 2/11 Doc ID 15524 Rev 2