STPS2H100ZF Power Schottky rectifier Datasheet - production data Description Single chip Schottky rectifiers suited to surface A K mounting and especially intended for use in high frequency converters, free-wheeling and reverse polarity protection.. A Table 1: Device summary Symbol Value IF(AV) 2 A K V 100 V RRM SOD123Flat VF (typ.) 0.60 V T (max.) 175 C j Features High junction temperature capability Low leakage current Negligible switching losses Avalanche capability specified ECOPACK 2 compliant component August 2016 DocID029645 Rev 1 1/8 www.st.com This is information on a product in full production. Characteristics STPS2H100ZF 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V T = 140 C/ L IF(AV) Average forward current 2 A = 0.5, square wave IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 50 A P Repetitive peak avalanche power t = 10 s, T = 125 C 105 W ARM p j Tstg Storage temperature range -65 to +175 C (1) T Maximum operating junction temperature -40 to +175 j Notes: (1) (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 3: Thermal parameters Symbol Parameter Max. value Unit R Junction to lead 20 C/W th(j-l) Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 1 A j (1) IR Reverse leakage current VR = VRRM Tj = 125 C - 0.2 0.5 mA T = 25 C - 0.86 j IF = 2 A Tj = 125 C - 0.65 0.70 (2) V Forward voltage drop V F T = 25 C - 0.96 j IF = 4 A Tj = 125 C - 0.75 0.83 Notes: (1) Pulse test: tp = 5 ms, < 2% (2) Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.57 x IF(AV) + 0.065 x IF (RMS) For more information, please refer to the following application notes related to the power losses. AN604 (Calculation of conduction losses in a power rectifier) AN4021 (Calculation of reverse losses in a power diode) 2/8 DocID029645 Rev 1