STPS30M120S Power Schottky rectifier Datasheet production data Features A K High current capability A Avalanche rated K Low forward voltage drop K High frequency operation A A Description A K A This Schottky diode is suited for high frequency K switch mode power supply. 2 TO-220AB narrow leads I PAK 2 STPS30M120STN STPS30M120SR Packaged in TO-220AB narrow leads and I PAK, this device is intended to be used in notebook, game station and desktop adapters, providing in these applications a good efficiency at both low Table 1. Device summary and high load. Symbol Value (a) Figure 1. Electrical characteristics I 30 A F(AV) V 120 V RRM I V V (typ) 0.45 V F Forwar I T (max) 150 C j 2 x I O X I F I O X V RRM V V R AR V I R V V V V F(I ) F F(2xI ) To o oRevers I AR a. V and I must respect the reverse safe ARM ARM operating area defined in Figure 9. V and I are AR AR pulse measurements (t < 10 s). V , I , V and p R R RRM V , are static characteristics F April 2012 Doc ID 022918 Rev 1 1/8 This is information on a product in full production. www.st.com 8 Obsolete Product(s) - Obsolete Product(s)Characteristics STPS30M120S 1 Characteristics Table 2. Absolute ratings (limiting values with terminals 1 and 3 short circuited at T = 25 C, unless otherwise specified) amb Symbol Parameter Value Unit V Repetitive peak reverse voltage 120 V RRM I Forward rms current 50 A F(RMS) I Average forward current, = 0.5 T = 110 C 30 A F(AV) c I Surge non repetitive forward current t = 10 ms sine-wave 260 A FSM p (1) P Repetitive peak avalanche power T = 125 C, t = 10 s 1450 W ARM j p Maximum repetitive peak (2) V t < 10 s, T < 125 C, I < 9.7 A 150 V ARM p j AR avalanche voltage Maximum single-pulse (2) V t < 10 s, T < 125 C, I < 9.7 A 150 V ASM p j AR peak avalanche voltage T Storage temperature range -65 to +175 C stg (3) T Maximum operating junction temperature 150 C j 1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, Admissible avalanche power of schottky diodes and AN2025, Converter improvement using Schottky rectifier avalanche specification. 2. See Figure 9 dPtot 1 3. < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Parameter Value Unit R Junction to case 1.3 C/W th(j-c) Table 4. Static electrical characteristics (terminals 1 and 3 short circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 70 345 A Reverse leakage j (1) I V = V R R RM current T = 125 C - 25 65 mA j T = 125 C I = 5 A - 0.45 0.50 j F I = 10 A T = 125 C - 0.52 0.57 F j T = 25 C -0.75 j (2) V Forward voltage drop V I = 15 A F F T = 125 C - 0.57 0.62 j T = 25 C -0.90 j I = 30 A F T = 125 C - 0.66 0.73 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.53 x I + 0.0067 x I F(AV) F (RMS) 2/8 Doc ID 022918 Rev 1 Obsolete Product(s) - Obsolete Product(s)