STPS30L40CW STMicroelectronics

STPS30L40CG/CT/CW LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS I 2x15A F(AV) A1 V 40 V RRM K K Tj (max) 150 C A2 V (max) 0.50 V F A2 FEATURES AND BENEFITS A1 2 D PAK n VERY SMALL CONDUCTION LOSSES STPS30L40CG n NEGLIGIBLE SWITCHING LOSSES n LOW FORWARD VOLTAGE DROP n LOW THERMAL RESISTANCE n AVALANCHE CAPABILITY SPECIFIED DESCRIPTION A2 Dual center tap schottky rectifiers suited for A2 K K Switched Mode Power Supplies and high A1 A1 frequency DC to DC converters. 2 Packaged in TO-247, TO-220AB and D PAK TO-247 TO-220AB these devices are intended for use in low voltage, STPS30L40CW STPS30L40CT high frequency inverters, free-wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit V 40 V RRM Repetitive peak reverse voltage I 30 A F(RMS) RMS forward current I 15 A F(AV) Average forward current Tc = 135C Per diode 30 = 0.5 Per device I 220 A FSM Surge non repetitive forward current tp = 10 ms Sinusoidal I 1A RRM Repetitive peak reverse current tp=2s square F=1kHz I 3A RSM Non repetitive peak reverse current tp = 100 s square P 6000 W ARM Repetitive peak avalanche power tp = 1s Tj = 25C T - 65 to + 150 C stg Storage temperature range Tj 150 C Maximum operating junction temperature * dV/dt 10000 V/s Critical rate of rise of reverse voltage dPtot 1 *: < thermal runaway condition for a diode on its own heatsink dTj Rth()j - a July 2003 - Ed: 4A 1/6STPS30L40CG/CT/CW THERMAL RESISTANCES Symbol Parameter Value Unit R Per diode 1.60 C/W th (j-c) Junction to case Total 0.85 R Coupling 0.10 C/W th (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests Conditions Min. Typ. Max. Unit I * 360 A R Reverse leakage cur- Tj = 25C V =V R RRM rent 20 50 mA Tj = 100C V * 0.55 V F Forward voltage drop Tj = 25C I =15A F 0.42 0.50 Tj = 125C I =15A F 0.74 Tj = 25C I =30A F 0.59 0.67 Tj = 125C I =30A F Pulse test : * tp = 380 s, <2% To evaluate the conduction losses use the following equation : 2 P = 0.330 x I + 0.011 I F(AV) F (RMS) Fig. 2: Average current versus ambient Fig. 1: Average forward power dissipation versus average forward current (per diode). temperature (=0.5) (per diode). PF(av)(W) IF(av)(A) 12 18 = 0.2 = 0.5 = 0.1 Rth(j-a)=Rth(j-c) 16 = 0.05 10 14 8 12 = 1 Rth(j-a)=15C/W 10 6 8 6 4 T T 4 2 2 =tp/T tp Tamb(C) =tp/T tp IF(av)A 0 0 0 25 50 75 100 125 150 0 2 4 6 8 10121416 1820 2/6