STPS30SM60CG-TR STMicroelectronics

STPS30SM60CG-TR electronic component of STMicroelectronics Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of STPS30SM60CG-TR Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS30SM60CG-TR Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

Part No. STPS30SM60CG-TR
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers Dual Diode Schottky 2x15A 60V 0.38V Vf
Datasheet: STPS30SM60CG-TR Datasheet (PDF)
Price (USD)
1: USD 2.2428 ea
Line Total: USD 2.24 
Availability : 0
  
QtyUnit Price
1$ 2.2428
10$ 1.8837
25$ 1.3608
100$ 1.1844
250$ 1.0332
500$ 1.0143

Availability 0
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 1000
Multiples : 1
QtyUnit Price
1000$ 1.7847


Availability 0
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.2428
10$ 1.8837
25$ 1.3608
100$ 1.1844
250$ 1.0332
500$ 1.0143


Availability 0
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 10
Multiples : 1
QtyUnit Price
10$ 1.6958
25$ 1.6762
50$ 1.6572

   
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Product Category
RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPS30SM60CG-TR from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPS30SM60CG-TR and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPS30SM60C Power Schottky rectifier Features A1 K High current capability A2 Avalanche rated K K Low forward voltage drop High frequency operation A2 A2 K Description A1 A1 2 2 D PAK I PAK The STPS30SM60C is a dual diode Schottky STPS30SM60CG-TR STPS30SM60CR rectifier, suited for high frequency switch mode power supply. K 2 2 Packaged in TO-220AB, I PAK and D PAK, this device is intended to be used in notebook, game station and desktop adapters, providing in these A2 applications a good efficiency at both low and K A1 high load. TO-220AB STPS30SM60CT Table 1. Device summary Symbol Value (a) Figure 1. Electrical characteristics I 2 x 15 A F(AV) V 60 V RRM I V V (typ) 0.405 VForwar F I 2 x I T (max) 150 C O X j IF I O X VRRM V V AR R V I R V V V V To F(Io) F F(2xIo)Revers I AR a. V and I must respect the reverse safe ARM ARM operating area defined in Figure 12. V and I are AR AR pulse measurements (t < 1 s). V , I , V and V , p R R RRM F are static characteristics November 2011 Doc ID 022023 Rev 1 1/10 www.st.com 10Characteristics STPS30SM60C 1 Characteristics Table 2. Absolute ratings (limiting values, per diode, at T = 25 C unless amb otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM I Forward rms current 40 A F(RMS) T = 130 C Per diode 15 c I Average forward current, = 0.5 A F(AV) T = 130 C Per device 30 c I Surge non repetitive forward current t = 10 ms sine-wave 300 A FSM p (1) P Repetitive peak avalanche power T = 25 C, t = 1 s 14400 W ARM j p Maximum repetitive peak (2) V t < 1 s, T < 150 C, I < 54 A 80 V ARM p j AR avalanche voltage Maximum single-pulse (2) V t < 1 s, T < 150 C, I < 54 A 80 V ARM p j AR peak avalanche voltage T Storage temperature range -65 to +175 C stg (3) T Maximum operating junction temperature 150 C j 1. For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. See Figure 12 dPtot 1 3. < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal parameters Symbol Parameter Value Unit per diode 1.5 R Junction to case C/W th(j-c) total 0.85 R Coupling 0.2 C/W th(c) When the two diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode 1) x R (Per diode) + P(diode 2) x R j th(j-c) th(c) 2/10 Doc ID 022023 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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