STPS30SM60 Power Schottky rectifier Features A K High current capability Avalanche rated Low forward voltage drop K High frequency operation Description The STPS30SM60D is a single diode Schottky rectifier, suited for high frequency switch mode A power supply. K Packaged in TO-220AC,this device is intended to TO-220AC be used in notebook, game station and desktop STPS30SM60D adapters, providing in these aplications a good efficiency at both low and high load. (a) Figure 1. Electrical characteristics Table 1. Device summary Symbol Value I V I 30 A F(AV)Forwar I V 60 V RRM 2 x I O X V (typ) 0.410 V F IF T (max) 150 C j I O X VRRM V V AR R V I R V V V V To F(Io) F F(2xIo)Revers I AR a. V and I must respect the reverse safe ARM ARM operating area defined in Figure 11. V and I are AR AR pulse measurements (t < 1 s). V , I , V and V , p R R RRM F are static characteristics October 2011 Doc ID 022053 Rev 1 1/7 www.st.com 7Characteristics STPS30SM60 1 Characteristics Table 2. Absolute ratings (limiting values, at T = 25 C unless otherwise amb specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM I Forward rms current 60 A F(RMS) I Average forward current, = 0.5 T = 125 C 30 A F(AV) c I Surge non repetitive forward current t = 10 ms sine-wave 400 A FSM p (1) P Repetitive peak avalanche power T = 25 C, t = 1 s 28000 W ARM j p Maximum repetitive peak (2) V t < 1 s, T < 150 C, I < 105 A 80 V ARM p j AR avalanche voltage Maximum repetitive peak (2) V t < 1 s, T < 150 C, I < 105 A 80 V ASM p j AR avalanche voltage T Storage temperature range -65 to +175 C stg (3) T Maximum operating junction temperature 150 C j 1. For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. See Figure 11 dPtot 1 3. < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal parameters Symbol Parameter Value Unit R Junction to case 1.0 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 30 135 A Reverse leakage j (1) I V = V R R RRM current T = 125 C - 20 80 mA j T = 25 C - 0.500 0.540 j I = 15 A F T = 125 C - 0.410 0.470 j (2) V Forward voltage drop V F T = 25 C - 0.570 0.640 j I = 30 A F T = 125 C - 0.515 0.600 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 0.435 x I + 0.0055 x I F(AV) F (RMS) 2/7 Doc ID 022053 Rev 1