Product Information

CDBV3-54A-G

CDBV3-54A-G electronic component of Comchip

Datasheet
Schottky Diodes & Rectifiers VR=30V, IO=200mA

Manufacturer: Comchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

CDBV3-54A-G
Comchip

1 : USD 0.7749
10 : USD 0.4941
100 : USD 0.0934
1000 : USD 0.0573
3000 : USD 0.0443
9000 : USD 0.0389
24000 : USD 0.0378
45000 : USD 0.0357
99000 : USD 0.0335
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Maximum Operating Temperature
Series
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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Small Signal Schottky Diodes CDBV3-54/S/C/A-G Reverse Voltage: 30 Volts Forward Current: 200 mA RoHS Device SOT-323 Features 0.087(2.20) 0.071(1.80) -Design for mounting on small surface. D -High speed switching application, circuit 0.053(1.35) 0.045(1.15) protection. G S -Low turn-on voltage. 0.055(1.40) 0.047(1.20) 0.010(0.25) 0.004(0.10) Mechanical data 0.039(1.00) 0.095(2.40) 0.032(0.80) 0.079(2.00) -Case: SOT-323, molded plastic. -Terminals: solderable per MIL-STD-750, 0.004(0.10) 0.016(0.40) method 2026. 0.000(0.00) 0.012(0.30) 0.017(0.425)REF. -Weight: 0.0055 gram (approx.). Circuit diagram Dimensions in inches and (millimeter) 3 3 3 3 1 2 1 2 1 2 1 2 CDBV3-54-G CDBV3-54S-G CDBV3-54C-G CDBV3-54A-G Maximum Ratings and Electrical Characteristics (at Ta=25C unless otherwise noted) Parameter Symbol Conditions Value Units Repetitive peak reverse voltage VRRM 30 V Reverse voltage VR 30 V Forward current IF 200 mA Peak surge forward current IFSM T=1.0 sec 0.6 A Power dissipation PD 200 mW IF=0.1mA 0.24 IF=1mA 0.32 Maximum forward voltage VF IF=10mA 0.40 V IF=30mA 0.50 IF=100mA 1.00 Maximum reverse current IR VR=25V 2 A Maximum reverse recovery time Trr IF=IR=10mA, RL=100 5 nS Maximum diode capacitance CJ VR=1V, f=1.0MHz 10 pF Maximum junction temperature TJ 125 C Storage temperature TSTG -55 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:E QW-BA006 Page 1 Comchip Technology CO., LTD.Small Signal Schottky Diodes RATING AND CHARACTERISTIC CURVES (CDBV3-54/S/C/A-G) Fig.1 - Forward Characteristics Fig.2 - Leakage Current 1000 1000 TA=150C 100 TA=125C 100 10 TA=150C 10 1 TA=85C TA=125C 0.1 1 0.01 TA=25C TA=-55C 0.1 0.001 0 5 10 15 20 25 30 0 0.1 0.2 0.3 0.4 0.5 0.6 Reverse Voltage, (V) Forward Voltage, (V) Fig.3 - Total Capacitance Fig.4 - Power Derating Curve 14 240 12 200 10 160 8 120 6 80 4 40 2 0 0 75 0 5 10 15 20 25 30 0 25 50 100 125 150 175 Reverse Voltage, (V) Ambient Temperature, (C) Company reserves the right to improve product design , functions and reliability without notice. REV:E QW-BA006 Page 2 Comchip Technology CO., LTD. TA=25C TA=-40C TA=85C Forward Current, (mA) Total Capacitance, (pF) Power Dissipation, (mW) Reverse Current, (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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