STPSC10C065-Y Datasheet Automotive 650 V power Schottky silicon carbide diode Features NC(1) K(2) A(3) AEC-Q101 qualified K No reverse recovery charge in application current range Switching behavior independent of temperature Recommended to PFC applications A PPAP capable K NC 2 ECOPACK 2 compliant component I PAK Description The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, the STPSC10C065-Y will boost performance in hard switching conditions. Product status link STPSC10C065-Y Product summary I 10 A F(AV) V 650 V RRM T (max.) 175 C j DS12402 - Rev 2 - September 2018 www.st.com For further information contact your local STMicroelectronics sales office.STPSC10C065-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V T from -40 C to 175 C Repetitive peak reverse voltage 650 V RRM j I Forward rms current 22 A F(RMS) (1) I T = 120 C, DC current Average forward current 10 A F(AV) c t = 10 ms sinusoidal, T = 25 C 85 p c I t = 10 ms sinusoidal, T = 125 C Surge non repetitive forward current 75 A FSM p c t = 10 s square, T = 25 C 500 p c T Storage temperature range -55 to +175 C stg (2) T Operating junction temperature -40 to +175 C j 1. Value based on R max. th(j-c) 2. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameters Value Symbol Parameter Unit Typ. Max. R Junction to case 1.3 2.0 C/W th(j-c) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 9 100 j (1) I Reverse leakage current V = V A R RRM R T = 150 C - 85 425 j T = 25 C - 1.56 1.75 j (2) V Forward voltage drop I = 10 A V F F T = 150 C - 1.98 2.50 j 1. Pulse test: t = 10 ms, < 2% p 2. Pulse test: t = 500 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 1.35 x I + 0.12 x I F(AV) F (RMS) Table 4. Dynamic electrical characteristics Symbol Parameter Test conditions Typ. Unit (1) V = 400 V Q Total capacitive charge 26.4 nC Cj R V = 0 V, T = 25 C, F = 1 MHz 480 R c C Total capacitance pF j V = 300 V, T = 25 C, F = 1 MHz 47 R c 1. V R Most accurate value for the capacitive charge: Q V = C V dV c j R j 0 DS12402 - Rev 2 page 2/9