Product Information

STQ2LN60K3-AP

STQ2LN60K3-AP electronic component of STMicroelectronics

Datasheet
MOSFET N-Ch 600V 4 Ohm 0.6A SuperMESH3 FET TO92
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.4593 ea
Line Total: USD 1.46

24 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
24 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STQ2LN60K3-AP
STMicroelectronics

1 : USD 0.5184
10 : USD 0.4417
30 : USD 0.4
100 : USD 0.3524
500 : USD 0.316
1000 : USD 0.3064

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

STQ2LN60K3-AP N-channel 600 V, 4 typ., 0.6 A MDmesh K3 Power MOSFET in a TO-92 package Datasheet - production data Features R DS(on) Order code VDS ID PTOT max 2.5 W STQ2LN60K3-AP 600 V 4.5 0.6 A 3 100% avalanche tested 2 Extremely high dv/dt capability 1 Very low intrinsic capacitance Improved diode reverse recovery TO-92 ammopack characteristics Zener-protected Figure 1: Internal schematic diagram Applications D(2) Switching applications Description This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics G(1) MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. S(3) AM15572v1 no tab Table 1: Device summary Order code Marking Package Packaging STQ2LN60K3-AP 2LN60K3 TO-92 Ammopack February 2017 DocID023499 Rev 3 1/13 www.st.com This is information on a product in full production. Contents STQ2LN60K3-AP Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 TO-92 ammopack package information .......................................... 10 5 Revision history ............................................................................ 12 2/13 DocID023499 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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