X-On Electronics has gained recognition as a prominent supplier of STS4DPF20L MOSFETs across the USA, India, Europe, Australia, and various other global locations. STS4DPF20L MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.
We are delighted to provide the STS4DPF20L from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STS4DPF20L and other electronic components in the MOSFETs category and beyond.
STS4DPF20L DUAL P-CHANNEL 20V - 0.07 - 4A SO-8 STripFET POWER MOSFET TYPE V R I DSS DS(on) D STS4DPF20L 20 V <0.08 4 A TYPICAL R (on) = 0.07 DS STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis uniqueSingle Feature Siz SO-8 strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS BATTERY MANAGEMENT IN NOMADIC EQUIPMENT POWER MANAGEMENT IN CELLULAR PHONES ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 20 V DS GS V Drain-gate Voltage (R = 20 k) 20 V DGR GS V Gate- source Voltage 16 V GS Drain Current (continuos) at T = 25C Single Operation 4 A C I D Drain Current (continuos) at T = 100C Single Operation 2.5 A C I () Drain Current (pulsed) 16 A DM Total Dissipation at T = 25C Dual Operation 1.6 W C P tot Total Dissipation at T = 25C Single Operation 2 W C () Pulse width limited by safe operating area. Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed February 2002 1/8 .STS4DPF20L THERMAL DATA Rthj-amb (*)Thermal Resistance Junction-ambient Single Operation 62.5 C/W Dual Operating 78 C/W T Thermal Operating Junction-ambient -55 to150 C j T Storage Temperature -55 to 150 C stg (*) 2 When Mounted on 0.5 in pad of 2 oz.copper ELECTRICAL CHARACTERISTICS (T = 25 C UNLESS OTHERWISE SPECIFIED) CASE OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit I = 250 A, V = 0 V Drain-source 20 V (BR)DSS D GS Breakdown Voltage Zero Gate Voltage V = Max Rating 1 A I DS DSS Drain Current (V = 0) V = Max Rating T = 125C 10 A GS DS C Gate-body Leakage V = 16 V I 100 nA GSS GS Current (V = 0) DS (*) ON Symbol Parameter Test Conditions Min. Typ. Max. Unit V Gate Threshold Voltage V = V I = 250 A 1 1.6 2.5 V GS(th) DS GS D V = 10 V I = 2 A R Static Drain-source On 0.070 0.08 GS D DS(on) Resistance V = 4.5 V I = 2 A 0.085 0.10 GS D DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit (*) g Forward Transconductance V = 15V I =2 A 10 S fs DS D V = 25V, f = 1 MHz, V = 0 C Input Capacitance 1350 pF iss DS GS C Output Capacitance 490 pF oss Reverse Transfer 130 pF C rs s Capacitance 2/8