Product Information

STS11N3LLH5

STS11N3LLH5 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 30 V 0.012 11A STripFET2

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.3386 ea
Line Total: USD 846.5

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2500
Multiples : 2500

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STS11N3LLH5
STMicroelectronics

2500 : USD 0.3386

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STS11N3LLH5
STMicroelectronics

1 : USD 0.8784
10 : USD 0.7583
25 : USD 0.724
100 : USD 0.5254
500 : USD 0.439
1000 : USD 0.3736

0 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May


Multiples : 1

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STS11N3LLH5
STMicroelectronics


0 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2500
Multiples : 1

Stock Image

STS11N3LLH5
STMicroelectronics

2500 : USD 0.3561

0 - WHS 5


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STS11N3LLH5
STMicroelectronics

1 : USD 1.179
10 : USD 1.0126
100 : USD 0.68
500 : USD 0.5794
1000 : USD 0.4963

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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STS11N3LLH5 N-channel 30 V, 0.0117 , 11 A, SO-8 STripFET V Power MOSFET Features R DS(on) Type V I DSS D max 5 (1) 8 STS11N3LLH5 30 V < 0.0132 11 A 1. The value is rated according R thj-pcb 4 R * Q industry benchmark DS(on) g 1 Extremely low on-resistance R DS(on) SO-8 Very low switching gate charge High avalanche ruggedness Low gate drive power losses Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using STMicroelectronics STripFETV technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class.. Table 1. Device summary Order code Marking Package Packaging STS11N3LLH5 11D3L SO-8 Tape and reel June 2011 Doc ID 15982 Rev 2 1/12 www.st.com 12 Obsolete Product(s) - Obsolete Product(s) Contents STS11N3LLH5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 15982 Rev 2 Obsolete Product(s) - Obsolete Product(s)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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