STS5DNF60L Datasheet Automotive-grade dual N-channel 60 V, 35 m typ., 5 A STripFET II Power MOSFET in an SO-8 package 5 Features 8 V R max. I Order code DS DS(on) D STS5DNF60L 60 V 45 m 5 A 4 1 AEC-Q101 qualified SO-8 Exceptional dv/dt capability 100% avalanche tested D1(7, 8) D2(5, 6) Low gate charge Applications G1(2) G2(4) Switching applications Description This Power MOSFET has been developed using STMicroelectronics unique S1(1) S2(3) STripFET process, which is specifically designed to minimize input capacitance and SC12820 gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STS5DNF60L Product summary Order code STS5DNF60L Marking 5DF60L Package SO-8 Packing Tape and reel DS5750 - Rev 4 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office.STS5DNF60L Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 60 V DS V Gate-source voltage 15 V GS Drain current (continuous) at T = 25 C 5 A amb I D Drain current (continuous) at T = 100 C 3 A amb (1) I Drain current (pulsed) 16 A DM (2) P Total power dissipation at T = 25 C 2 W amb TOT T Storage temperature range C stg -55 to 150 T Operating junction temperature range C J 1. Pulse width limited by safe operating area. 2. P = 1.6 W for single operation. TOT Table 2. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance, junction-to-board 62.5 C/W thJB 1. When mounted on 1 inch FR-4 board, 2 Oz Cu, t 10 s, dual operation. DS5750 - Rev 4 page 2/14