STS5N15F4 N-channel 150 V, 0.057 , 5 A, SO-8 STripFET DeepGATE Power MOSFET Features R DS(on) Type V I DSS D max STS5N15F4 150 V < 0.063 5 A N-channel enhancement mode SO-8 100% avalanched rated Low gate charge Very low on-resistance Application Figure 1. Internal schematic diagram Switching applications Description This STripFET DeepGATE Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performances. Table 1. Device summary Order code Marking Package Packaging STS5N15F4 5U15- SO-8 Tape and reel August 2009 Doc ID 16083 Rev 2 1/11 www.st.com 11 Electrical ratings STS5N15F4 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V = 0) 150 V DS GS V Gate-source voltage 20 V GS I Drain current (continuous) at T = 25 C 5 A D C I Drain current (continuous) at T =100 C 3 A D C (1) I Drain current (pulsed) 20 A DM P Total dissipation at T = 25 C 2.5 W TOT C T Storage temperature stg -55 to 150 C T Operating junction temperature j 1. Pulse width limited by safe operating area Table 3. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance junction-pcb max 50 C/W thj-pcb 1. When mounted on FR-4 board of 1 inch, 2 oz Cu, t < 10 sec Table 4. Avalanche characteristics Symbol Parameter Max value Unit Avalanche current, repetitive or not-repetitive I 5A AS (pulse width limited by T max) j Single pulse avalanche energy E 125 mJ AS (starting T = 25 C, I = I , V = 140 V) j D AS DD 2/11 Doc ID 16083 Rev 2