Product Information

STT7P2UH7

STT7P2UH7 electronic component of STMicroelectronics

Datasheet
MOSFET P-channel 20 V, 0.0195 Ohm typ., 7 A STripFET H7 Power MOSFET in a SOT23-6L package

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 6000
Multiples : 1

Stock Image

STT7P2UH7
STMicroelectronics

6000 : USD 0.6017
N/A

Obsolete
0 - WHS 2

MOQ : 6000
Multiples : 6000

Stock Image

STT7P2UH7
STMicroelectronics

6000 : USD 0.2546
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

STT7P2UH7
STMicroelectronics

1 : USD 1.163
10 : USD 0.9671
30 : USD 0.8239
100 : USD 0.7059
500 : USD 0.6857
1000 : USD 0.6757
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1

Stock Image

STT7P2UH7
STMicroelectronics

1 : USD 0.587
10 : USD 0.4869
100 : USD 0.3139
1000 : USD 0.251
3000 : USD 0.2342
9000 : USD 0.2342
24000 : USD 0.2249
45000 : USD 0.2214
99000 : USD 0.2168
N/A

Obsolete
0 - WHS 5

MOQ : 1
Multiples : 1

Stock Image

STT7P2UH7
STMicroelectronics

1 : USD 0.9575
5 : USD 0.5962
6 : USD 0.3722
82 : USD 0.3502
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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STT7P2UH7 P-channel 20 V, 0.0195 typ., 7 A STripFET H7 Power MOSFET in a SOT23-6L package Datasheet - production data Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness Applications Switching applications SOT23-6L Description This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate Figure 1: Internal schematic diagram structure combined with extremely low on- resistance. The device also offers ultra-low capacitances for higher switching frequency operations. Table 1: Device summary Order code Marking Package Packaging STT7P2UH7 7L2U SOT23-6L Tape and reel For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. Features Order code V R max I DS DS(on) D STT7P2UH7 20 V 0.0225 4.5 V 7 A October 2014 DocID025142 Rev 3 1/13 www.st.com This is information on a product in full production. Contents STT7P2UH7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 SOT23-6L package mechanical data .............................................. 10 5 Revision history ............................................................................ 12 2/13 DocID025142 Rev 3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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