STT4P3LLH6 Datasheet P-channel 30 V, 48 m typ., 4 A, STripFET H6 Power MOSFET in an SOT23-6L package Features V R max. I Order code DS DS(on) D STT4P3LLH6 30 V 56 m at 10 V 4 A Very low on-resistance Very low gate charge High avalanche ruggedness SOT23-6L Low gate drive power loss D (1,2,5,6) Applications Switching applications Description G (3) This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all packages. DS(on) S (4) PG3D1256S4 Product status link STT4P3LLH6 Product summary Order code STT4P3LLH6 Marking 4K3L Package SOT23-6L Packing Tape and reel DS9649 - Rev 3 - December 2021 www.st.com For further information contact your local STMicroelectronics sales office.STT4P3LLH6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 30 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 4 amb I A D Drain current (continuous) at T = 100 C 2.5 amb (1) I Drain current (pulsed) 16 A DM P Total power dissipation at T = 25 C 1.6 W TOT amb T Storage temperature range stg -55 to 150 C T Operating junction temperature J 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance, junction-to-ambient 78 C/W thJA 1. When mounted on 1 inch FR-4 board, 2 oz. Cu., t 10 s. Note: For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. DS9649 - Rev 3 page 2/12