STTH30AC06CPF STMicroelectronics

STTH30AC06C Datasheet Turbo 2 ultrafast high voltage rectifier A1 Features K A2 Ultrafast switching Low reverse current Low thermal resistance Reduces switching and conduction losses A2 Insulated package TO-3PF: A2 K K A1 A1 TO3P-3L Insulated voltage: 2500 V DC STTH30AC06CP TO-3PF STTH30AC06CPF Description The STTH30AC06C uses ST Turbo 2 600 V technology. It is suited as boost diode A2 K TO-247 LL specially for use in air conditioning equipment as continuous mode interleaved power A1 STTH30AC06CWL factor correction. Product status link STTH30AC06C Product summary I 2 x 15 A F(AV) V 600 V RRM t (typ) 40 ns rr V (typ) 1.15 V F T 175 C j DS9831 - Rev 5 - April 2018 www.st.com For further information contact your local STMicroelectronics sales office.STTH30AC06C Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM I Forward rms current 30 A F(RMS) Per diode 15 I Average forward current A F(AV) Per device 30 I Surge non repetitive forward current t = 10 ms sinusoidal 140 A FSM p T Storage temperature range -65 to +175 C stg T Maximum operating junction temperature 175 C j Table 2. Thermal parameters Symbol Parameter Max. value Unit Per diode 1.5 TO3P-3L, TO247 LL Total 0.85 R Junction to case th(j-c) Per diode 3.5 TO-3PF C/W Total 2.7 TO3P-3L, TO247 LL) 0.2 R Coupling th(c) TO-3PF 1.9 Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 10 j (1) V = V I Reverse leakage current A R R RRM T = 150 C - 40 400 j T = 25 C - 1.95 j I = 15 A F T = 150 C - 1.15 1.45 j (2) V Forward voltage drop V F T = 25 C - 2.25 j I = 30 A F T = 150 C - 1.42 1.8 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses, use the following equation: 2 P = 1.1 x I + 0.023 x I F(AV) F (RMS) DS9831 - Rev 5 page 2/15