STTH30R04G-TR STMicroelectronics

STTH30R04 Ultrafast recovery diode Datasheet - production data Description . The compromise-free, high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability . Table 1. Device summary 2 72 & Symbol Value . I 30 A F(AV) . V 400 V RRM T 175 C j (max) V 0.97 V F (typ) t 24 ns rr (typ) . 3 Features Ultrafast switching Low reverse current Low thermal resistance Reduces switching and conduction losses High junction temperature ECOPACK 2 compliant component December 2015 DocID13392 Rev 2 1/13 This is information on a product in full production. www.st.com 13Characteristics STTH30R04 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 400 V RRM I RMS forward current 50 A F(RMS) I Average forward current, = 0.5 TO-220AC / DO-247 / DPAK T = 120 C 30 A F(AV) c I Repetitive peak forward current t = 10 ms, F = 1 KHz 500 A FRM p Surge non repetitive forward I t = 10 ms Sinusoidal 300 A FSM p current T Storage temperature range -65 to +175 C stg T Operating junction temperature range -40 to +175 C j Table 3. Thermal parameters Symbol Parameter Value Unit R Junction to case TO-220AC / DO-247 / DPAK 1.15 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min Typ Max Unit T = 25 C 15 j (1) I Reverse leakage current T = 100 C V = V 3 30 A R j R RRM T = 125 C 15 150 j T = 25 C 1.26 j I = 15 A F T = 150 C 0.8 1.0 j (2) V Forward voltage drop T = 25 C 1.45 V F j T = 100 C I = 30 A 1.3 j F T = 150 C 0.97 1.2 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.9 x I + 0.01 x I F(AV) F (RMS) 2/13 DocID13392 Rev 2