Product Information

STTH80S06W

STTH80S06W electronic component of STMicroelectronics

Datasheet
Rectifiers Turbo 2 ultrafast high voltage rectifier

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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STTH80S06W
STMicroelectronics

1 : USD 6.5672
10 : USD 4.3488
100 : USD 3.665
600 : USD 3.152
1200 : USD 2.8315
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Operating Temperature Range
Product
Termination Style
Width
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
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Subcategory
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STTH80S06 Turbo 2 ultrafast high voltage rectifier Datasheet - production data Description . The STTH80S06, which is using ST Turbo 2 600 V technology, is specially suited for use in switching power supplies, and solar inverters. Thanks to its low V characteristics, as well as F fast recovery, this device exhibits high performance in free-wheeling applications or boost converters working at switching frequency up to 100 kHz Table 1. Device summary 2 Symbol Value I 80 A F(AV) V 600 V RRM Features T (max) 175 C j Ultrafast switching V (typ) 1.65 V F Low reverse current t (typ) 32 ns rr Low thermal resistance Reduces switching and conduction losses Repetitive peak reverse voltage specified from -40 C to +175 C July 2015 DocID028111 Rev 1 1/8 This is information on a product in full production. www.st.comCharacteristics STTH80S06 1 Characteristics Table 2. Absolute ratings (limiting values at T = 25 C, unless otherwise specified) j Symbol Parameter Value Unit T = -40 C to +175 C V Repetitive peak reverse voltage 600 V j RRM I RMS forward current 113 A F(RMS) I Average forward current, = 0.5 square wave T = 105 C 80 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 400 A FSM p T Storage temperature range -65 to +175 C stg T Operating junction temperature range -40 to +175 C j Table 3. Thermal parameters Symbol Parameter Value Unit R Junction to case 0.3 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C -0.2 50 A j (1) I Reverse leakage current V = V R R RRM T = 150 C - 0.2 2 mA j T = 25 C -1.7 2.2 j I = 20 A F (2) V Forward voltage drop T = 150 C - 1.0 1.3 V F j T = 150 C I = 80 A - 1.65 2.15 j F 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.43 x I + 0.009 x I F(AV) F (RMS) Table 5. Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I = 0.5 A, I = 0.25 A, I = 1 A - 32 45 ns F rr R T = 25 C j I = 1 A, V = 30 V, F R t Reverse recovery time -55 75 ns rr dI /dt = -50 A/s F -110 - ns I = 80 A, I Reverse recovery current F - 14 - A RM T = 125 C dI /dt = -200 A/s, j F S Softness factor - 0.4 - - factor V = 400 V R Q Reverse recovery charges - 900 - nC rr t Forward recovery time I = 80 A, - - 800 ns fr F T = 25 C dI /dt = 200 A/s, j F V Forward recovery voltage - 3.6 - V FP V = 1.1 x V FR Fmax 2/8 DocID028111 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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