Product Information

STTH810D

STTH810D electronic component of STMicroelectronics

Datasheet
Rectifiers Ultrafast recovery high voltage diode

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 0.4439 ea
Line Total: USD 443.9

43 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 1000  Multiples: 45
Pack Size: 45
Availability Price Quantity
21000 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

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STTH810D
STMicroelectronics

1 : USD 0.48
1000 : USD 0.4592
2000 : USD 0.4501
5000 : USD 0.4501
10000 : USD 0.4501

43 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1000
Multiples : 45

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STTH810D
STMicroelectronics

1000 : USD 0.4439

16 - WHS 3


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

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STTH810D
STMicroelectronics

1 : USD 1.287
3 : USD 0.9711
10 : USD 0.8385
23 : USD 0.728
62 : USD 0.689

21000 - WHS 4


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 20
Multiples : 1

Stock Image

STTH810D
STMicroelectronics

20 : USD 0.48
1000 : USD 0.4592
2000 : USD 0.4501

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Maximum Operating Temperature
Series
Height
Length
Product
Width
Brand
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
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STTH810 Ultrafast recovery - high voltage diode Main product characteristics A K I 8 A F(AV) V 1000 V RRM T 175 C j V (typ) 1.30 V F t (typ) 47 ns rr A A K K Features and benefits TO-220AC TO-220FPAC Ultrafast, soft recovery STTH810D STTH810FP Very low conduction and switching losses High frequency and/or high pulsed current operation K High reverse voltage capability High junction temperature A A Insulated packages: NC TO-220Ins K Electrical insulation = 2500 V RMS 2 DPAK TO-220Ins Capacitance = 7 pF STTH810G STTH810DI TO-220FPAC Electrical insulation = 2500 V RMS Capacitance = 12 pF Order codes Description Part Number Marking The high quality design of this diode has produced a device with low leakage current, STTH810D STTH810D regularly reproducible characteristics and intrinsic STTH810G STTH810G ruggedness. These characteristics make it ideal for heavy duty applications that demand long term STTH810G-TR STTH810G reliability. STTH810FP STTH810FP Such demanding applications include industrial STTH810DI STTH810DI power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. March 2006 Rev 1 1/11 www.st.com 11Characteristics STTH810 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1000 V RRM 2 TO-220AC / D PAK / TO-220FPAC 30 I RMS forward current A F(RMS) TO-220AC Ins 20 2 TO-220AC / D PAK T = 130 C c I Average forward current, = 0.5 TO-220FPAC T = 75 C 8A F(AV) c TO-220AC Ins T = 105 C c I Repetitive peak forward current t = 5 s, F = 5 kHz square 100 A FRM p I Surge non repetitive forward current t = 10 ms Sinusoidal 60 A FSM p T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 2. Thermal parameters Symbol Parameter Value Unit 2 TO-220AC / D PAK 2.5 R Junction to case TO-220FPAC 5.8 C/W th(j-c) TO-220AC Ins 4.1 Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 5 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 2 20 j T = 25 C 2 j (2) V Forward voltage drop T = 100 C I = 8 A 1.4 1.8 V F j F T = 150 C 1.3 1.7 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 1.3 x I + 0.05 I F(AV) F (RMS) 2/11

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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