Product Information

STTH8S06D

STTH8S06D electronic component of STMicroelectronics

Datasheet
Rectifiers ULT FAST HI VLT RECT TURBO 2

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9267 ea
Line Total: USD 0.93

651 - Global Stock
Ships to you between
Wed. 29 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
646 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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STTH8S06D
STMicroelectronics

1 : USD 0.746
10 : USD 0.6194
50 : USD 0.5106
100 : USD 0.4472
500 : USD 0.4096
1000 : USD 0.3899

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Factory Pack Quantity :
Height
Length
Termination Style
Width
Cnhts
Hts Code
Mxhts
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STTH8S06 Turbo 2 ultrafast high voltage rectifier Datasheet - production data K A Description This device is an ultrafast diode based on 600 V K Pt doping planar technology. It can be used in hard switching conditions for power factor corrections. Its extremely low reverse recovery current reduces the switching A power losses of the MOSFET and thus increases K TO-220AC the overall application efficiency. This diode is also intended for applications in power supplies and power conversions systems, and all sorts of power switching. Table 1: Device summary A Symbol Value K TO-220FPAC IF(AV) 8 A V 600 V RRM Features IRM(typ.) 4.4 A Ultrafast recovery V (typ.) 1.5 V F Low reverse recovery current Tj (max.) 175 C Low thermal resistance t (typ.) 12 ns rr Higher frequency operation Reduces switching and conduction losses Insulated TO-220FPAC: Insulating voltage = 2000 V RMS Package capacitance = 12 pF February 2017 DocID14277 Rev 2 1/12 www.st.com This is information on a product in full production. Characteristics STTH8S06 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V I Average forward current = 0.5 square wave 8 A F(AV) IFSM Surge non repetitive forward current tp = 10 ms 60 A T Storage temperature range -65 to +175 stg C Tj Maximum operating junction temperature 175 Table 3: Thermal parameters Symbol Parameter Max. value Unit TO-220AC, 3.0 C/ DPAK Rth(j-c) Junction to case W TO-220FPAC 5.5 Table 4: Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 20 j I Reverse leakage current V = 600 V A R R Tj = 125 C - 25 200 T = 25 C - 3.4 j V Forward voltage drop I = 8 A V F F Tj = 150 C - 1.5 1.9 To evaluate the maximum conduction losses, use the following equation: 2 P = 1.20 x IF(AV) + 0.087 x IF (RMS) Table 5: Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IF = 1 A, trr Reverse recovery time dIF/dt = - 200 A/s, - 12 18 ns VR = 30 V Reverse recovery IRM - 1.6 2.2 A T = 25 C j current IF = 8 A, Sfactor Softness factor dIF/dt = - 200 A/s, - 1 - VR = 200 V Reverse recovery Qrr - 17 nC charges Reverse recovery IRM - 4.4 6.0 A current I = 8 A, F Sfactor Softness factor Tj = 125 C dIF/dt = - 200 A/s, - 0.3 - V = 200 V R Reverse recovery Qrr - 90 nC charges 2/12 DocID14277 Rev 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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