X-On Electronics has gained recognition as a prominent supplier of STW11NK90Z MOSFETs across the USA, India, Europe, Australia, and various other global locations. STW11NK90Z MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STW11NK90Z STMicroelectronics

Name: STW11NK90Z
Brand: STMicroelectronics
SKU: STW11NK90Z_STMicroelectronics
Availability: InStock
Rating: 5 (11 reviews)

STW11NK90Z electronic component of STMicroelectronics

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See Product Specifications

Part No.	STW11NK90Z
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	MOSFET N Ch 900V Zener SuperMESH 9.2A
Datasheet:	STW11NK90Z Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 3.6364 ea
Line Total: USD 3.64

Availability - 96
Ship by Tue. 20 May to Fri. 23 May

MOQ: 1 Multiples: 1
Pack Size: 1

STW11NK90Z More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

96

Ship by Tue. 20 May to Fri. 23 May

MOQ : 1
Multiples : 1

1 : USD 3.6364
10 : USD 2.3282
30 : USD 1.8699
100 : USD 1.6389
500 : USD 1.5344
1000 : USD 1.4885

35

Ship by Fri. 09 May to Tue. 13 May

MOQ : 1
Multiples : 1

1 : USD 7.658
7 : USD 2.856
18 : USD 2.702

Specifications

Manufacturer

STMicroelectronics STMicroelectronics

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

9.2 A 9.2 A

Vds - Drain-Source Breakdown Voltage

900 V 900 V

Rds On - Drain-Source Resistance

980 mOhms 980 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

3 V 3 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

200 W 200 W

Mounting Style

Through Hole Through Hole

Package / Case

TO - 247 TO - 247

Packaging

Tube Tube

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

10 V 10 V

Qg - Gate Charge

95 nC 95 nC

Channel Mode

Enhancement Enhancement

Tradename

Supermesh Supermesh

Configuration

Single Single

Series

Stw11nk90z Stw11nk90z

Brand

Stmicroelectronics Stmicroelectronics

Continuous Drain Current

9.2 A 9.2 A

Drain-Source Breakdown Voltage

900 V 900 V

Gate-Source Breakdown Voltage

+/- 30 V +/- 30 V

Power Dissipation

200 W 200 W

Rds On

980 Mohms 980 Mohms

Fall Time

50 ns 50 ns

Gate Charge Qg

95 nC 95 nC

Rise Time

19 ns 19 ns

Factory Pack Quantity :

30 30

Typical Turn-Off Delay Time

76 ns 76 ns

Height

20.15 mm 20.15 mm

Length

15.75 mm 15.75 mm

Transistor Type

1 N - Channel 1 N - Channel

Width

5.15 mm 5.15 mm

Cnhts

8541210000 8541210000

Hts Code

8541290095 8541290095

Mxhts

85412101 85412101

Product Type

Mosfet Mosfet

Subcategory

Mosfets Mosfets

Taric

8541210000 8541210000

Typical Turn-On Delay Time

30 ns 30 ns

Notes:- Show Stocked Products With Similar Attributes.

STW11NK90Z Alternative Parts

We are delighted to provide the STW11NK90Z from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STW11NK90Z and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STW11NK90Z N-channel 900V - 0.82 - 9.2A - TO-247 Zener-protected SuperMESH Power MOSFET General features Type V R I Pw DSS DS(on) D STW11NK90Z 900V <0.98 9.2A 200W 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances TO-247 Very good manufacturing repeability Description The SuperMESH series is obtained through an extreme optimization of STs well established Internal schematic diagram strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh products Applications Switching application Order codes Part number Marking Package Packaging STW11NK90Z W11NK90Z TO-247 Tube July 2006 Rev 2 1/12 www.st.com 12Contents STW11NK90Z Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 5 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
96 Ship by Tue. 20 May to Fri. 23 May MOQ : 1 Multiples : 1	1 : USD 3.6364 10 : USD 2.3282 30 : USD 1.8699 100 : USD 1.6389 500 : USD 1.5344 1000 : USD 1.4885

35 Ship by Fri. 09 May to Tue. 13 May MOQ : 1 Multiples : 1	1 : USD 7.658 7 : USD 2.856 18 : USD 2.702

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