STW25N95K3 STMicroelectronics

STW25N95K3 N-channel 950 V, 0.32 , 22 A, TO-247 SuperMESH3 Power MOSFET Features R DS(on) Type V I Pw DSS D max STW25N95K3 950 V < 0.36 22 A 400 W 100% avalanche tested Extremely large avalanche performance 3 2 1 Gate charge minimized TO-247 Very low intrinsic capacitances Zener-protected Application Switching applications Figure 1. Internal schematic diagram Description D(2) This SuperMESH3 Power MOSFET is the result of improvements applied to STMicroelectronics SuperMESH technology, combined with a new optimized vertical structure. This device boasts an extremely low on- G(1) resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. S(3) AM01476v1 Table 1. Device summary Order code Marking Package Packaging STW25N95K3 25N95K3 TO-247 Tube January 2012 Doc ID 15584 Rev 2 1/13 www.st.com 13 Contents STW25N95K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 12 2/13 Doc ID 15584 Rev 2