STW56N60M2-4 STMicroelectronics

STW56N60M2-4 N-channel 600 V, 0.045 typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V T R max I DS Jmax DS(on) D STW56N60M2-4 650 V 0.055 52 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications Figure 1: Internal schematic diagram Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packaging STW56N60M2-4 56N60M2 TO247-4 Tube January 2015 DocID026751 Rev 3 1/12 www.st.com This is information on a product in full production. Contents STW56N60M2-4 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 TO247-4 package information ........................................................... 9 5 Revision history ............................................................................ 11 2/12 DocID026751 Rev 3