X-On Electronics has gained recognition as a prominent supplier of STW56N60M2 mosfet across the USA, India, Europe, Australia, and various other global locations. STW56N60M2 mosfet are a product manufactured by STMicroelectronics. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

STW56N60M2

STW56N60M2 electronic component of STMicroelectronics
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See Product Specifications
Part No.STW56N60M2
Manufacturer: STMicroelectronics
Category:MOSFET
Description: STMicroelectronics MOSFET
Datasheet: STW56N60M2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

600: USD 6.9441 ea
Line Total: USD 4166.46

Availability - 2352
Ships to you between
Thu. 30 May to Wed. 05 Jun
MOQ: 600  Multiples: 600
Pack Size: 600

STW56N60M2 More Buying Options & Price Grid(s)

Availability Price Quantity
424 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 12.8378
5 : USD 11.0441
10 : USD 9.7259
50 : USD 9.0187
100 : USD 8.6775
250 : USD 7.9869

582 - WHS 2


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 600
Multiples : 600
600 : USD 6.7304

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Series
Brand
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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Additional Infomation About Product

STW56N60M2 N-channel 600 V, 0.045 typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on) Order code V T I DS Jmax D max STW56N60M2 650 V 0.055 52 A Extremely low gate charge Excellent output capacitance (C ) profile oss 100% avalanche tested Zener-protected 2 7 Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance * and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. 6 0 Y Table 1. Device summary Order code Marking Package Packaging STW56N60M2 56N60M2 TO-247 Tube December 2014 DocID027243 Rev2 1/12 This is information on a product in full production. www.st.comContents STW56N60M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 DocID027243 Rev2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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