STW58N60DM2AG STMicroelectronics

STW58N60DM2AG Automotive-grade N-channel 600 V, 0.052 typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STW58N60DM2AG 600 V 0.060 50 A 360 W Designed for automotive applications and 3 AEC-Q101 qualified 2 Fast-recovery body diode 1 Extremely low gate charge and input capacitance TO-247 Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Figure 1: Internal schematic diagram D(2) Applications Switching applications Description This high voltage N-channel Power MOSFET is G(1) part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge (Q ) rr and time (t ) combined with low R , rendering rr DS(on) it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. S(3) AM15572v1 no tab Table 1: Device summary Order code Marking Package Packing STW58N60DM2AG 58N60DM2 TO-247 Tube July 2015 DocID027912 Rev 2 1/12 www.st.com This is information on a product in full production. Contents STW58N60DM2AG Contents 1 Electrical ratings ............................................................................... 3 2 Electrical characteristics ................................................................. 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ...................................................................................... 8 4 Package information ........................................................................ 9 4.1 TO-247 package information ............................................................. 9 5 Revision history .............................................................................. 11 2/12 DocID027912 Rev 2