STW60N65M5 STMicroelectronics

STW60N65M5 STFW60N65M5 N-channel 650 V, 0.049 , 46 A MDmesh V Power MOSFET in TO-247, TO-3PF Features V R DSS DS(on) Order codes I D T max Jmax STFW60N65M5 111 710 V < 0.059 46 A STW60N65M5 3 3 Worldwide best R * area amongst the DS(on) 2 2 1 1 silicon based devices TO-247 TO-3PF Higher V rating DSS High dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested Figure 1. Internal schematic diagram Application Switching applications Description The devices are N-channel MDmesh V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The 3 resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially - V suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Package Packaging STFW60N65M5 TO-3PF 60N65M5 Tube STW60N65M5 TO-247 May 2011 Doc ID 18222 Rev 2 1/16 www.st.com 16 Obsolete Product(s) - Obsolete Product(s) Contents STFW60N65M5, STW60N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 15 2/16 Doc ID 18222 Rev 2 Obsolete Product(s) - Obsolete Product(s)