STW68N60M6 Datasheet N-channel 600 V, 35 m typ., 63 A MDmesh M6 Power MOSFET in a TO-247 package Features V R max. I Order code DS DS(on) D STW68N60M6 600 V 41 m 63 A Reduced switching losses 3 2 Lower R per area vs previous generation DS(on) 1 Low gate input resistance TO-247 100% avalanche tested Zener-protected D(2, TAB) Applications Switching applications G(1) LLC converters Boost PFC converters S(3) AM01475V1 Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R per area improvement with DS(on) one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Maturity status link STW68N60M6 Device summary Order code STW68N60M6 Marking 68N60M6 Package TO-247 Packing Tube DS12066 - Rev 2 - November 2018 www.st.com/Power Transistors For further information contact your local STMicroelectronics sales office.STW68N60M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 63 A C I D Drain current (continuous) at T = 100 C 40 A C (1) I Drain current (pulsed) 252 A DM P Total power dissipation at T = 25 C 390 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 100 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 63 A, di/dt 400 A/s, V < V , V = 400 V SD DS(peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.32 C/W thj-case R Thermal resistance junction-ambient 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 7.5 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 1100 mJ AS j D AR DD DS12066 - Rev 2 page 2/13