Product Information

STW69N65M5

STW69N65M5 electronic component of STMicroelectronics

Datasheet
Transistor: N-MOSFET; unipolar; 650V; 36.5A; 330W; TO247
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 10.1031 ea
Line Total: USD 10.1

194 - Global Stock
Ships to you between
Mon. 20 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
3 - WHS 1


Ships to you between
Mon. 27 May to Thu. 30 May

MOQ : 1
Multiples : 1

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STW69N65M5
STMicroelectronics

1 : USD 12.738
10 : USD 11.1894
30 : USD 10.2447
100 : USD 9.4534

19 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

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STW69N65M5
STMicroelectronics

1 : USD 16.744
2 : USD 12.857
3 : USD 12.844
4 : USD 12.155
10 : USD 12.142

31 - WHS 3


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

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STW69N65M5
STMicroelectronics

1 : USD 12.8712

582 - WHS 4


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 4
Multiples : 1

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STW69N65M5
STMicroelectronics

4 : USD 12.2051
10 : USD 10.9049
50 : USD 10.3194

194 - WHS 5


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

STW69N65M5
STMicroelectronics

1 : USD 10.1031
10 : USD 9.6478
25 : USD 9.5628
50 : USD 9.383
100 : USD 9.1953

Read More Specifications

     
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Kind Of Package
Type Of Transistor
Drain Current
Gate-Source Voltage
Drain-Source Voltage
On-State Resistance
Power Dissipation
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Additional Infomation About Product

STFW69N65M5 STW69N65M5 N-channel 650 V, 0.037 typ., 58 A MDmesh V Power MOSFET in TO-3PF and TO-247 packages Datasheet production data Features Order codes V T R max I DSS Jmax DS(on) D STFW69N65M5 710 V < 0.045 58 A STW69N65M5 111 Worldwide best R * area DS(on) 3 3 Higher V rating and high dv/dt capability 2 DSS 2 1 1 Excellent switching performance TO-247 100% avalanche tested TO-3PF Applications Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially 3 suitable for applications which require superior power density and outstanding efficiency. - V Table 1. Device summary Order codes Marking Package Packaging STFW69N65M5 TO-3PF 69N65M5 Tube STW69N65M5 TO-247 September 2012 Doc ID 022906 Rev 2 1/16 This is information on a product in full production. www.st.com 16Contents STFW69N65M5, STW69N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 15 2/16 Doc ID 022906 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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