STW70N60M2 STMicroelectronics

STW70N60M2 N-channel 600 V, 0.03 typ., 68 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet production data Features Order codes V T R max I DS Jmax DS(on) D STW70N60M2 650 V 0.040 68 A Extremely low gate charge 3 2 1 Excellent output capacitance (C ) profile oss 100% avalanche tested TO-247 Zener-protected Applications Figure 1. Internal schematic diagram Switching applications D(2) Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical G(1) structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. S(3) AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STW70N60M2 70N60M2 TO-247 Tube September 2014 DocID024327 Rev 4 1/13 This is information on a product in full production. www.st.com 13Contents STW70N60M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 DocID024327 Rev 4