Product Information

STWA48N60M6

Name: STWA48N60M6
Brand: STMicroelectronics
SKU: STWA48N60M6_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STWA48N60M6 electronic component of STMicroelectronics

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Datasheet

MOSFET PTD HIGH VOLTAGE

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 12.8093 ea
Line Total: USD 12.81

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Thu. 23 May to Mon. 27 May MOQ : 1 Multiples : 1 STWA48N60M6 STMicroelectronics	1 : USD 10.7121

0 - WHS 2 Ships to you between Fri. 17 May to Thu. 23 May MOQ : 1 Multiples : 1 STWA48N60M6 STMicroelectronics	1 : USD 12.8093 2 : USD 8.3858 6 : USD 7.9245

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Additional Infomation About Product

The STWA48N60M6 is a high-voltage MOSFET produced by STMicroelectronics. It is an N-channel power MOSFET in an enhanced TO-247 package, specifically designed to withstand high blocking voltages. This device is suitable for use in applications such as switching lighting ballasts or light-emitting diodes as well as in high-voltage AC or DC converters. It offers good switching performance and very low losses thanks to its low-on-state resistance and to its reduced gate charge. With a maximum drain-source voltage of 600V, high efficiency can be achieved in switched power supplies and other applications requiring high blocking voltages. The STWA48N60M6 also features temperature monitoring and over-current protection for improved safety.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
Id - Continuous Drain Current 39 A 39 A
Vds - Drain-Source Breakdown Voltage 600 V 600 V
Rds On - Drain-Source Resistance 69 mOhms 69 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 3.25 V 3.25 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 250 W 250 W
Mounting Style Through Hole Through Hole
Package / Case TO - 247 - 3 TO - 247 - 3
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 10 V 10 V
Qg - Gate Charge 57 nC 57 nC
Channel Mode Enhancement Enhancement
Configuration Single Single
Transistor Type 1 N - Channel 1 N - Channel
Brand Stmicroelectronics Stmicroelectronics
Fall Time 9.5 ns 9.5 ns
Product Type Mosfet Mosfet
Rise Time 34 ns 34 ns
Factory Pack Quantity : 30 30
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 60 ns 60 ns
Typical Turn-On Delay Time 28 ns 28 ns