Product Information

STWA70N60DM2

Name: STWA70N60DM2
Brand: STMicroelectronics
SKU: STWA70N60DM2_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STWA70N60DM2 electronic component of STMicroelectronics

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Datasheet

MOSFET PTD HIGH VOLTAGE

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 16.828 ea
Line Total: USD 16.83

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Thu. 30 May to Mon. 03 Jun MOQ : 1 Multiples : 1 STWA70N60DM2 STMicroelectronics	1 : USD 13.6122 10 : USD 12.0099 25 : USD 11.5077

0 - WHS 2 Ships to you between Fri. 24 May to Thu. 30 May MOQ : 1 Multiples : 1 STWA70N60DM2 STMicroelectronics	1 : USD 16.828 2 : USD 11.466 4 : USD 10.836 600 : USD 10.4355

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Additional Infomation About Product

The STWA70N60DM2 with MOSFET PTD HIGH VOLTAGE is an advanced MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed specifically for high-voltage applications. This part is manufactured by STMicroelectronics and is a part of their Power MOSFET Family. It is composed of STMicroelectronics' top-of-the-line STDiNOx 7 nanoscale technology and features a smooth S-shaped metal gate and soft body edge termination (SBET), allowing for improved switching performances. This part can handle up to 70A of continuous drain current and can switch at high frequency with ultra low gate charge, thus reducing power loss. It also features a low on-resistance of 0.033O and a drain-source Breakdown Voltage (BVDSS) of 600V, making it suitable for any high-voltage application requirement.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
Id - Continuous Drain Current 66 A 66 A
Vds - Drain-Source Breakdown Voltage 600 V 600 V
Rds On - Drain-Source Resistance 37 mOhms 37 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 3 V 3 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 446 W 446 W
Mounting Style Through Hole Through Hole
Package / Case TO - 247 - 3 TO - 247 - 3
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 25 V 25 V
Qg - Gate Charge 120 nC 120 nC
Channel Mode Enhancement Enhancement
Configuration Single Single
Series Stwa70n60dm2 Stwa70n60dm2
Transistor Type 1 N - Channel 1 N - Channel
Brand Stmicroelectronics Stmicroelectronics
Forward Transconductance - Min - -
Fall Time 10.4 ns 10.4 ns
Product Type Mosfet Mosfet
Rise Time 67 ns 67 ns
Factory Pack Quantity : 600 600
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 112 ns 112 ns
Typical Turn-On Delay Time 32 ns 32 ns