Product Information

STWA57N65M5

STWA57N65M5 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET N-Ch 650 V 0.056 Ohm 42 A Mdmesh
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 9.8281 ea
Line Total: USD 9.83

272 - Global Stock
Ships to you between
Mon. 03 Jun to Thu. 06 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
249 - WHS 1


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1

Stock Image

STWA57N65M5
STMicroelectronics

1 : USD 9.2556
10 : USD 8.1882
30 : USD 7.5375
100 : USD 6.9917

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

STW57N65M5, STWA57N65M5 N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFETs in TO-247 and TO-247 long leads packages Datasheet - production data Features Order codes V T R max I DS Jmax DS(on) D STW57N65M5 710 V 0.063 42 A STWA57N65M5 Worldwide best R *area amongst the 3 DS(on) 2 silicon based devices 1 TO-247 Higher V rating, high dv/dt capability DSS TO-247 long leads Excellent switching performance Easy to drive, 100% avalanche tested Applications Figure 1. Internal schematic diagram Switching applications Description These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is * combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- 6 based Power MOSFETs, making it especially suitable for applications which require superior 0 Y power density and outstanding efficiency. Table 1. Device summary Order codes Marking Packages Packaging STW57N65M5 TO-247 57N65M5 Tube STWA57N65M5 TO-247 long leads December 2013 DocID024050 Rev 2 1/16 This is information on a product in full production. www.st.comContents STW57N65M5, STWA57N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 15 2/16 DocID024050 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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