DMT6009LCT
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
I Excellent Q R Product (FOM)
D GD X DS(ON)
BV R Max
DSS DS(ON)
T = +25C
C
Advanced Technology for DC-DC Converts
37.2A
12m @V = 10V
GS
Low Input/Output Leakage
60V
33.9A
14.5m @V = 4.5V
GS
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description and Applications Mechanical Data
This new generation MOSFET features low on-resistance and fast
Case: TO220AB
switching, making it ideal for high-efficiency power management
Case Material: Molded Plastic, Green Molding Compound.
applications.
UL Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
DC-DC Converters
Solderable per MIL-STD-202, Method 208
Power Management Functions
Terminal Connections: See Diagram Below
Load Switch
Weight: 1.85 grams (Approximate)
TO220AB
Top View
Top View Bottom View Equivalent Circuit
Pin-Out Configuration
Ordering Information (Note 4)
Part Number Case Packaging
DMT6009LCT TO220AB 50 Pieces/Tube
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMT6009LCT
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage 60 V
V
DSS
Gate-Source Voltage 16 V
V
GSS
T = +25C 37.2
C
Continuous Drain Current (Note 6) V = 10V I A
GS D
29.8
T = +100C
C
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 80 A
DM
Maximum Body Diode Forward Current (Note 6) I 80 A
S
Avalanche Current, L = 0.1mH I 19.8 A
AS
Avalanche Energy, L = 0.1mH 19.6 mJ
E
AS
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) 2.2 W
TA = +25C PD
Thermal Resistance, Junction to Ambient (Note 5) 55 C/W
R
JA
Total Power Dissipation (Note 6) 25 W
T = +25C P
C D
Thermal Resistance, Junction to Case (Note 6) 5 C/W
R
JC
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage 60 V
BV V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 48V, V = 0V
DSS DS GS
Gate-Source Leakage I 100 nA V = 16V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V 0.7 2 V V = V , I = 250A
GS(TH) DS GS D
9.4 12 V = 10V, I = 13.5A
GS D
Static Drain-Source On-Resistance m
R
DS(ON)
7.6 14.5 V = 4.5V, I = 11.5A
GS D
Diode Forward Voltage V 1.2 V V = 0V, I = 20A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance C 1,925
ISS
V = 30V, f = 1MHz,
DS
438
Output Capacitance pF
COSS
V = 0V
GS
Reverse Transfer Capacitance 41
C
RSS
Gate Resistance 1.7
R V = 0V, V = 0V, f = 1MHz
G DS GS
15.6
Total Gate Charge (V = 4.5V) Q
GS G
33.5
Total Gate Charge (V = 10V) Q
GS G
nC V = 30V, I = 13.5A
DD D
4.7
Gate-Source Charge Q
GS
5.3
Gate-Drain Charge Q
GD
4.5
Turn-On Delay Time t
D(ON)
8.6
Turn-On Rise Time t
R V = 30V, V = 10V,
DS GS
ns
35.9
Turn-Off Delay Time t R = 6, I = 13.5A
D(OFF) G D
15.7
Turn-Off Fall Time
t
F
Reverse Recovery Time 18.2 ns
t
RR
I = 13.5A, di/dt = 100A/s
F
Reverse Recovery Charge 33.1 nC
Q
RR
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on an infinite heat sink.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
2 of 7
May 2016
DMT6009LCT
www.diodes.com Diodes Incorporated
Document number: DS38044 Rev. 1 - 2