X-On Electronics has gained recognition as a prominent supplier of DMTH6016LFDFWQ-7R MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMTH6016LFDFWQ-7R MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMTH6016LFDFWQ-7R Diodes Incorporated

DMTH6016LFDFWQ-7R electronic component of Diodes Incorporated
DMTH6016LFDFWQ-7R Diodes Incorporated
DMTH6016LFDFWQ-7R MOSFETs
DMTH6016LFDFWQ-7R  Semiconductors

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See Product Specifications
Part No. DMTH6016LFDFWQ-7R
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 41V-60V
Datasheet: DMTH6016LFDFWQ-7R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0137 ea
Line Total: USD 1.01 
Availability - 77582
Ship by Wed. 28 May to Fri. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
52
Ship by Fri. 06 Jun to Wed. 11 Jun
MOQ : 1
Multiples : 1
1 : USD 0.9
10 : USD 0.8782
30 : USD 0.6464
100 : USD 0.5724

77582
Ship by Wed. 28 May to Fri. 30 May
MOQ : 1
Multiples : 1
1 : USD 1.0137
10 : USD 0.705
100 : USD 0.4466
500 : USD 0.3883
1000 : USD 0.3498
3000 : USD 0.3058

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the DMTH6016LFDFWQ-7R from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMTH6016LFDFWQ-7R and other electronic components in the MOSFETs category and beyond.

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DMTH6016LFDFWQ 60V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Max Rated to +175CIdeal for High Ambient Temperature D BV R Max DSS DS(ON) T = +25C Environments A 100% Unclamped Inductive Switching (UIS) Test in Production: 18m V = 10V 9.4A GS 60V Ensures More Reliable and Robust End Application 27.5m V = 4.5V 7.6A GS Low R Ensures On-State Losses Are Minimized DS(ON) 0.6mm ProfileIdeal for Low-Profile Applications 2 PCB Footprint of 4mm Sidewall Plated for Improved Optical Inspection Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen- and Antimony-Free. Green Device (Note 3) The DMTH6016LFDFWQ is suitable for automotive applications requiring specific change control this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. DMTH6016LFDFWQ Marking Information 66 = Product Type Marking Code YM = Date Code Marking 66 Y = Year (ex: H = 2020) M = Month (ex: 9 = September) Date Code Key Year 2017 2018 2019 2020 2021 2022 2023 2024 Code E F G H I J K L Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C 9.4 A Continuous Drain Current (Note 7) V = 10V I A GS D 6.6 T = +100C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 70 A I DM Continuous Source-Drain Diode Current (Note 7) 3.0 A I S Pulsed Source-Drain Diode Current (10s Pulse, Duty Cycle = 1%) 70 A I SM Avalanche Current, L = 0.1mH I 15.3 A AS Avalanche Energy, L = 0.1mH E 11.7 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 1.06 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 6) R 141 C/W JA Total Power Dissipation (Note 7) T = +25C P 2.3 W A D Thermal Resistance, Junction to Ambient (Note 7) R 63 C/W JA Thermal Resistance, Junction to Case (Note 7) T = +25C R 9.6 C/W C JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2 of 8 January 2021 DMTH6016LFDFWQ www.diodes.com Diodes Incorporated Datasheet number: DS40959 Rev. 4 - 2 ADVANCED INFORMATION YM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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