STX93003 STMicroelectronics

STX93003 HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR ST93003 SILICON IN TO-92 PACKAGE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION TO-92 The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STX93003 is expressly designed for a new INTERNAL SCHEMATIC DIAGRAM solution to be used in compact fluorescent lamps, where it is coupled with the STX83003, its complementary NPN transistor. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) -500 V CES BE V Collector-Emitter Voltage (I = 0) -400 V CEO B V Emitter-Base Voltage (I = 0) V V EBO C (BR)EBO o (I = 0, I = -0.5 A, t < 10s, T < 150 C) C B p j I Collector Current -1 A C I Collector Peak Current (t < 5 ms) -3 A CM p I Base Current -0.5 A B I Base Peak Current (t < 5 ms) -1.5 A BM p o Ptot Total Dissipation at TC = 25 C 1.5 W o T Storage Temperature -65 to 150 C stg o Tj Max. Operating Junction Temperature 150 C 1/7 October 2002 STX93003 THERMAL DATA o R Thermal Resistance Junction-Case Max 83.3 C/W thj-case o R Thermal Resistance Junction-Ambient Max 200 C/W thj-Amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = -500V -1 mA CES CE o Current (V = 0) V = -500V T = 125 C -5 mA BE CE j V Emitter Base I = -10 mA -5 -10 V (BR)EBO E Breakdown Voltage (I = 0) C V * Collector-Emitter I = -10 mA -400 V CEO(sus) C Sustaining Voltage L = 25 mH (I = 0) B V * Collector-Emitter I = -0.5 A I = -0.1 A -0.5 V CE(sat) C B Saturation Voltage IC = -0.35 A IB = -50 mA -0.5 V V * Base-Emitter I = -0.5 A I = -0.1 A -1 V BE(sat) C B Saturation Voltage h * DC Current Gain I = -10 mA V = -5 V 10 FE C CE I = -0.35 A V = -5 V 16 25 32 C CE I = -1 A V = -5 V 4 C CE RESISTIVE LOAD t Rise Time I = -0.35 A V = 125 V 90 ns r C CC t Storage Time I = -70 mA I = 70 mA 1.5 2.2 2.9 s s B1 B2 t Fall Time 0.1 s f T 25 s (see Figure 2) p INDUCTIVE LOAD I = -0.5 A I = -0.1 A C B1 t Storage Time V = 5 V L = 10 mH 400 ns s BE(off) t Fall Time V = 300 V (see Figure 1) 40 ns f clamp E Avalanche Energy L = 4 mH C = 1.8 nF 12 mJ sb o o I 2.5 A 25 C < T < 125 C BR C * Pulsed: Pulse duration = 300s, duty cycle = 1.5 %. 2/7