TD350E STMicroelectronics

TD350E Advanced IGBT/MOSFET driver Datasheet - production data Applications 1200 V, 3-phase inverters Motor control UPS systems Description The TD350E device is an advanced gate driver for IGBTs and power MOSFETs. Control and protection functions are included and allow the Features design of high reliability systems. 1.5 A source/2.3 A sink (typ.) gate drive The innovative active Miller clamp function Active Miller clamp feature eliminates the need for negative gate drive in most applications and allows the use of a simple Two-level turn-off with adjustable level and bootstrap supply for the high side driver. delay Desaturation detection The device includes a two-level turn-off feature with adjustable level and delay. This function Fault status output protects against excessive overvoltage at turn-off Negative gate drive capability in case of overcurrent or short-circuit conditions. Input compatible with pulse transformer or The same delay set in the two-level turn-off optocoupler feature is applied at turn-on to prevent pulse width distortion. Separate sink and source outputs for easy gate driving The device also includes IGBT desaturation protection and a FAULT status output, and is UVLO protection compatible with both pulse transformer and 2 kV ESD protection (HBM) optocoupler signals. Table 1. Device summary Order code Temperature range Package Packaging TD350E Tube -40, +125 C SO-14 TD350ETR Tape and reel June 2013 DocID018539 Rev 3 1/18 This is information on a product in full production. www.st.comContents TD350E Contents 1 Block diagram 3 2 Pin connections . 4 3 Absolute maximum ratings . 5 4 Electrical characteristics . 6 5 Functional description . 8 5.1 Input 8 5.2 Voltage reference 8 5.3 Desaturation protection . 8 5.4 Active Miller clamp . 8 5.5 Two-level turn-off 8 5.6 Minimum ON time 9 5.7 Output 9 5.8 Fault status output . 9 5.9 Undervoltage protection . 9 6 Timing diagrams . 12 7 Typical performance curves 13 8 Application diagrams . 14 9 Package information 15 10 Revision history . 17 2/18 DocID018539 Rev 3