TIP147 STMicroelectronics

TIP142, TIP147 Complementary power Darlington transistors Datasheet production data Features Monolithic Darlington configuration Integrated antiparallel collector-emitter diode Applications 3 2 1 Linear and switching industrial equipment TO-247 Description The devices are manufactured in planar technology with base island layout and Figure 1. Internal schematic diagrams monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. R typ. = 5 k R typ. = 8 k 1 1 R typ. = 60 R typ. = 100 2 2 Table 1. Device summary Part number Marking Polarity Package Packaging TIP142 TIP142 NPN TO-247 Tube TIP147 TIP147 PNP April 2012 Doc ID 4132 Rev 8 1/10 This is information on a product in full production. www.st.com 10Absolute maximum ratings TIP142, TIP147 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) 100 V CBO E V Collector-emitter voltage (I = 0) 100 V CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 10 A C I Collector peak current 20 A CM I Base current 0.5 A B P Total dissipation at T = 25 C 125 W TOT case T Storage temperature -65 to 150 C STG T Max. operating junction temperature 150 C J Note: For PNP type voltage and current are negative. Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 1 C/W thJC 2/10 Doc ID 4132 Rev 8