TN3050H-12WY Datasheet 30 A, 1200 V automotive grade SCR Thyristor Features A AEC-Q101 qualified G High junction temperature: T = 150 C j K AC off state voltage: +/- 1200 V TAB = A Nominal on-state current: 30 A RMS High noise immunity: 1000 V/s Max. gate triggering current: 50 mA G A ECOPACK2 compliant component K TO-247 uninsulated Applications Automotive applications: on board and off board battery charger Renewable energy inverters Solid state relay 3-Phase heating or motor soft start control UPS (uninterruptible power supply) Bypass SSR / hybrid relay Inrush current limiter in battery charger AC-DC voltage controlled rectifier Industrial welding systems Product status TN3050H-12WY Description The TN3050H-12WY is an automotive grade SCR Thyristor designed for applications Product summary such as automotive on-board chargers, solid state AC relays and stationary battery I 30 A T(RMS) chargers. V /V 1200 V DRM RRM This SCR Thyristor, rated for a 30 A RMS power switching, offers superior performance in peak voltage robustness up to 1400 V and surge current handling up V /V 1400 V DSM RSM to 300 A sine wave pulse. Its key features allow the design of functions such as a 42 I A RMS AC switch (dual back-to-back SCRs) and a 38 A average AC-DC controlled 50 mA GT rectifier bridge for inrush current limitation. T 150 C j Available in through-hole TO-247 package, this power package allows a thermal operation up to 30 A RMS with a higher case temperature of 126 C. DS11831 - Rev 5 - March 2020 www.st.com For further information contact your local STMicroelectronics sales office.TN3050H-12WY Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values) Symbol Parameter Value Unit I RMS on-state current (180 conduction angle) 30 A T(RMS) T = 126 C C I Average on-state current (180 conduction angle) 19 A T(AV) t = 8.3 ms 330 p T initial = 25 j (1) I Non repetitive surge peak on-state current, V = 0 V A R TSM C t = 10 ms 300 p V /V Repetitive off-state voltage (50-60 Hz) T = 150 C 1200 V DRM RRM j I = 2 x I , tr 100 ns G GT T = 150 C dl/dt f = 50 Hz 200 A/s j Critical rate of rise of on-state current I t = 20 s T = 150 C Peak forward gate current 8 A GM p j P Average gate power dissipation T = 150 C 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature -40 to +150 C j 1. ST recommend It value for fusing = 450 As for T = 25 C and t = 10 ms j P Table 2. Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Test Conditions Value Unit Min. 10 I V = 12 V, R = 33 mA GT D L Max. 50 V V = 12 V, R = 33 Max. 1.3 V GT D L V V = 2/3 x V , R = 3.3 k T = 150 C Min. 0.2 V GD D DRM L j I I = 500 mA, gate open Max. 100 mA H T I I = 1.2 x I Max. 125 mA L G GT t I = 60 A , V = 2/3 x V , I = 100 mA, dI /dt = 0.2 A/s Typ. 1 s gt T D DRM G G dV/dt V = 2/3 x V , gate open T = 150 C Min. 1000 V/s D DRM j I = 20 A, dI /dt = 10 A/s, V = 75 V, T T R t T = 150 C Typ. 150 s q j V = 2/3 x V , dV /dt = 20 V/s, t = 100 s D DRM D P V I = 60 A, t = 380 s Max. 1.65 V TM TM P V T = 150 C Threshold voltage Max. 0.88 V TO j R T = 150 C Dynamic resistance Max. 14 m D j T = 25 C Max. 5 A j I /I V = V , V = V T = 125 C Max. 3 mA DRM RRM D DRM R RRM j T = 150 C Max. 5 mA j I /I V = V , V = V T = 25 C Max. 10 A DSM RSM D DSM R RSM j DS11831 - Rev 5 page 2/10