TN4050-12PI Datasheet 40 A, 1200 V standard SCR Features A Max. Repetitive Blocking Voltage = V , V = 1200 V DRM RRM G I maximum = 50 mA GT K High static and dynamic commutation: dI/dt = 100 A/s dV/dt = 2000 V/s ECOPACK 2 component (RoHS and HF compliance) Complies with UL 1557 standard (File ref : E81734) K A G Applications TOP3 Isolated Solar / Wind renewable energy inverters and rectifiers Solid state relay (SSR) Uninterruptible power supply (UPS) Industrial SMPS Bypass AC DC inrush current limiter (ICL) Battery charger AC DC voltage controlled rectifier Industrial welding systems Off board automotive battery charger Product status Soft starter Heating systems TN4050-12PI Product summary Description Order code TN4050-12PI The TN4050-12PI SCR is suitable in industrial applications where high immunity is Package TOP3 isolated required with a lower gate current and ceramic isolated tab, UL1557 certified rated at 2.5 kV RMS and UL94-V0 resin compliance. I 40 A T(RMS) Available in through-hole high power package TOP3 isolated tab. V /V 1200 V DRM RRM I 50 mA GT DS12925 - Rev 1 - February 2019 www.st.com For further information contact your local STMicroelectronics sales office.TN4050-12PI Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit I On-state RMS current (180 conduction angle) 40 T(RMS) T = 82.5 C A c I Average on-state current (180 conduction angle) 25 T(AV) t = 8.3 ms 420 p I Non repetitive surge peak on-state current ( T initial = 25 C) A TSM j t = 10 ms 400 p 2 2 2 t = 10 ms 800 I t I t value for fusing A s p Critical rate of rise of on-state current dl/dt f = 60 Hz T = 125 C 100 A/s j I = 100 mA, dI /dt = 1 A/s G g I Maximum peak positive gate current 8 A GM t = 20 s T = 125 C p j V Maximum peak positive gate voltage 5 V GM P T = 125 C Average gate power dissipation 1 W G(AV) j V Maximum peak reverse gate voltage 3.5 V RGM T Storage junction temperature range -40 to +150 stg C T Operating junction temperature range -40 to +125 j Table 2. Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Test conditions Value Unit Min. 10 I mA GT V = 12 V, R = 33 Max. 50 D L V Max. 1.5 V GT V V = V , R = 3.3 k T = 125 C Min. 0.2 V GD D DRM L j I I = 500 mA, gate open Max. 100 mA H T I I = 1.2 x I Max. 130 mA L G GT V = 67% V , gate open T = 125 C dV/dt Min. 2 kV/s D DRM j t I = 40 A, V = V , I = 200 mA, (dI /dt) max = 0.2 A/s Typ. 2 s gt T D DRM G G t I = 40 A, V = 800 V, dl /dt = 30 A/s, V = 75 V, dV /dt = 20 V/s T = 125 C Typ. 100 s q TM D TM R D j Table 3. Static characteristics Symbol Test conditions Value Unit V I = 80 A, t = 380 s T = 25 C Max. 1.75 TM TM p j V V T = 125 C Threshold voltage Max. 0.9 TO j R T = 125 C Dynamic resistance Max. 9.8 m D j T = 25 C 10 A j I , I V = V = 1200 V Max. DRM RRM DRM RRM T = 125 C 5 mA j DS12925 - Rev 1 page 2/11