TN5015H-6I Datasheet High temperature 50 A SCRs Features A High junction temperature: T = 150 C j High noise immunity dV/dt = 500V/s up to 150 C G Gate triggering current I = 15 mA GT K Peak off-state voltage V /V = 600 V DRM RRM High turn-on current rise dI/dt = 100 A/s ECOPACK 2 compliant Insulated package TO-220AB: K Insulated voltage: 2500 V A RMS G Complies with UL 1557 (File ref : E81734) TO-220AB insulated Applications Motorbike voltage regulator circuits Inrush current limiting circuits Motor control circuits and starters Solid state relays Overvoltage crowbar protection Description The TN5015H-6I offers high thermal performance operation up to 50 A thanks to its Product status junction temperature T up to 150 C. Its fully tab insulated (thanks to ceramic inside) j TN5015H-6I TO-220AB package allows a back to back configuration. Its trade-off noise immunity (dV/dt = 500 V/s) versus its gate triggering current (I = GT Product summary 15 mA) and its turn-on current rise (dI/dt = 100 A/s) allow to design robust and Order code TN5015H-6I compact control circuit for voltage regulator in motorbikes and industrial drives, overvoltage crowbar protection, motor control circuits in power tools and kitchen Package TO-220AB Ins. appliances, inrush current limiting circuits. V /V 600 V DRM RRM I 15 mA GT DS12178 - Rev 3 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office.TN5015H-6I Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values), T = 25 C unless otherwise specified j Symbol Parameter Value Unit I T = 75 C RMS on-state current (180 conduction angle) 50 A T(RMS) c T = 81 C 30 c I T = 97 C Average on-state current (180 conduction angle) 25 A T(AV) c T = 111 C 20 c t = 8.3 ms 493 p I Non repetitive surge peak on-state current ( T initial = 25 C) A TSM j t = 10 ms 450 p (1) R = 3 k, 8/20 us current shape, 10 pulses I 1500 A PP G-A 2 2 2 t = 10 ms 1012 I t I t value for fusing p A s I = 2 x I , tr 100 ns G GT dl/dt f = 60 Hz 100 A/s Critical rate of rise of on-state current V /V T = 150 C Repetitive peak off-state voltage 600 V DRM RRM j V /V t = 10 ms V /V + 100 Non repetitive surge peak off-state voltage V DSM RSM p DRM RRM I t = 20 s T = 150 C Peak gate current 4 A GM p j P T = 150 C Average gate power dissipation 1 W G(AV) j V Maximum peak reverse gate voltage 5 V RGM T Storage junction temperature range -40 to +150 C stg T Maximum operating junction temperature -40 to +150 C j T Maximum lead temperature soldering during 10 s 260 C l V Insulation RMS voltage, 1 minute 2500 V ins 1. According to IEC61000-4-5 standard (See Section 2) Table 2. Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Test conditions Value Unit I Max. 15 mA GT V = 12 V, R = 33 D L V Max. 1.3 V GT V V = V , R = 3.3 k T = 150 C Min. 0.15 V GD D DRM L j I I = 500 mA, gate open Max. 60 mA H T I I = 1.2 x I Max. 80 mA L G GT V = 402 V, gate open T = 150 C dV/dt Min. 500 V/s D j t I = 100 A, V = 402 V, I = 30 mA, (dI /dt) max = 0.2 A/s Typ. 1.9 s gt TM D G G t I = 100 A, V = 402 V, (dl /dt)max = 30 A/s, V = 25 V, dV /dt = 50 V/s T = 150 C Typ. 85 s q TM D T R D j DS12178 - Rev 3 page 2/13